Improved performance of surface-passivated solar cells by chlorine-containing oxides

M. A. Jackson; B. B. Rao; W. A. Anderson

doi:10.1063/1.335338

Improved performance of surface-passivated solar cells by chlorine-containing oxides

M. A. Jackson
, B. B. Rao
, W. A. Anderson

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Many metal-oxide-semiconductor (MOS) devices rely upon surface passivation for improved performance. An oxide grown in the presence of Cl was evaluated using highly efficient, surface-passivated, photovoltaic cells. The Cl-containing oxide gave increased efficiency, increased stability, and reduced surface-state density. Spectral response, Auger, and secondary ion mass spectrometry (SIMS) data support these conclusions. Preliminary results regarding stoichiometry of the oxide are presented.

Original language	English
Pages (from-to)	4742-4745
Number of pages	4
Journal	Journal of Applied Physics
Volume	57
Issue number	10
DOIs	https://doi.org/10.1063/1.335338
State	Published - 1985

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@article{a046da5f47aa4df18cd37436cd5d8894,

title = "Improved performance of surface-passivated solar cells by chlorine-containing oxides",

abstract = "Many metal-oxide-semiconductor (MOS) devices rely upon surface passivation for improved performance. An oxide grown in the presence of Cl was evaluated using highly efficient, surface-passivated, photovoltaic cells. The Cl-containing oxide gave increased efficiency, increased stability, and reduced surface-state density. Spectral response, Auger, and secondary ion mass spectrometry (SIMS) data support these conclusions. Preliminary results regarding stoichiometry of the oxide are presented.",

author = "Jackson, \{M. A.\} and Rao, \{B. B.\} and Anderson, \{W. A.\}",

year = "1985",

doi = "10.1063/1.335338",

language = "English",

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journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Improved performance of surface-passivated solar cells by chlorine-containing oxides

AU - Jackson, M. A.

AU - Rao, B. B.

AU - Anderson, W. A.

PY - 1985

Y1 - 1985

N2 - Many metal-oxide-semiconductor (MOS) devices rely upon surface passivation for improved performance. An oxide grown in the presence of Cl was evaluated using highly efficient, surface-passivated, photovoltaic cells. The Cl-containing oxide gave increased efficiency, increased stability, and reduced surface-state density. Spectral response, Auger, and secondary ion mass spectrometry (SIMS) data support these conclusions. Preliminary results regarding stoichiometry of the oxide are presented.

AB - Many metal-oxide-semiconductor (MOS) devices rely upon surface passivation for improved performance. An oxide grown in the presence of Cl was evaluated using highly efficient, surface-passivated, photovoltaic cells. The Cl-containing oxide gave increased efficiency, increased stability, and reduced surface-state density. Spectral response, Auger, and secondary ion mass spectrometry (SIMS) data support these conclusions. Preliminary results regarding stoichiometry of the oxide are presented.

UR - https://www.scopus.com/pages/publications/36549093416

U2 - 10.1063/1.335338

DO - 10.1063/1.335338

M3 - Article

SN - 0021-8979

VL - 57

SP - 4742

EP - 4745

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Improved performance of surface-passivated solar cells by chlorine-containing oxides

Abstract

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