Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs with Lanthanum Silicate by High Temperature Forming Gas Anneal

Xiangyu Yang; Bongmook Lee; Veena Misra

doi:10.1109/LED.2017.2785851

Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs with Lanthanum Silicate by High Temperature Forming Gas Anneal

Xiangyu Yang
, Bongmook Lee
, Veena Misra

College of Engineering

SUNY Polytechnic Institute

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report the effect of a high-temperature forming gas anneal (FGA) on the electrical characteristics and threshold voltage (V_T) instability of high-mobility Si-face (0001) 4H-SiC metal oxide semiconductor field effect transistors (MOSFETs) with lanthanum silicate (LaSiO_x). The MOSFET with LaSiO_x after 800 °C FGA in 5% H₂ and 95% N₂ mixture shows significantly reduced V_T shift under 3-MV/cm positive bias stressing from 2.78 to 1.65 V, while maintaining high field-effect mobility of 122.7 cm²/Vs and sufficiently positive V_T of 2.76 V.

Original language	English
Article number	8233202
Pages (from-to)	244-247
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	2
DOIs	https://doi.org/10.1109/LED.2017.2785851
State	Published - Feb 2018

Keywords

4H-SiC
atomic layer deposition
electron mobility
forming gas anneal
lanthanum silicate
threshold voltage

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10.1109/LED.2017.2785851

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title = "Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs with Lanthanum Silicate by High Temperature Forming Gas Anneal",

abstract = "We report the effect of a high-temperature forming gas anneal (FGA) on the electrical characteristics and threshold voltage (VT) instability of high-mobility Si-face (0001) 4H-SiC metal oxide semiconductor field effect transistors (MOSFETs) with lanthanum silicate (LaSiOx). The MOSFET with LaSiOx after 800 °C FGA in 5\% H2 and 95\% N2 mixture shows significantly reduced VT shift under 3-MV/cm positive bias stressing from 2.78 to 1.65 V, while maintaining high field-effect mobility of 122.7 cm2/Vs and sufficiently positive VT of 2.76 V.",

keywords = "4H-SiC, atomic layer deposition, electron mobility, forming gas anneal, lanthanum silicate, threshold voltage",

author = "Xiangyu Yang and Bongmook Lee and Veena Misra",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

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doi = "10.1109/LED.2017.2785851",

language = "English",

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T1 - Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs with Lanthanum Silicate by High Temperature Forming Gas Anneal

AU - Yang, Xiangyu

AU - Lee, Bongmook

AU - Misra, Veena

PY - 2018/2

Y1 - 2018/2

N2 - We report the effect of a high-temperature forming gas anneal (FGA) on the electrical characteristics and threshold voltage (VT) instability of high-mobility Si-face (0001) 4H-SiC metal oxide semiconductor field effect transistors (MOSFETs) with lanthanum silicate (LaSiOx). The MOSFET with LaSiOx after 800 °C FGA in 5% H2 and 95% N2 mixture shows significantly reduced VT shift under 3-MV/cm positive bias stressing from 2.78 to 1.65 V, while maintaining high field-effect mobility of 122.7 cm2/Vs and sufficiently positive VT of 2.76 V.

AB - We report the effect of a high-temperature forming gas anneal (FGA) on the electrical characteristics and threshold voltage (VT) instability of high-mobility Si-face (0001) 4H-SiC metal oxide semiconductor field effect transistors (MOSFETs) with lanthanum silicate (LaSiOx). The MOSFET with LaSiOx after 800 °C FGA in 5% H2 and 95% N2 mixture shows significantly reduced VT shift under 3-MV/cm positive bias stressing from 2.78 to 1.65 V, while maintaining high field-effect mobility of 122.7 cm2/Vs and sufficiently positive VT of 2.76 V.

KW - 4H-SiC

KW - atomic layer deposition

KW - electron mobility

KW - forming gas anneal

KW - lanthanum silicate

KW - threshold voltage

UR - https://www.scopus.com/pages/publications/85039795389

U2 - 10.1109/LED.2017.2785851

DO - 10.1109/LED.2017.2785851

M3 - Article

SN - 0741-3106

VL - 39

SP - 244

EP - 247

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 8233202

ER -

Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs with Lanthanum Silicate by High Temperature Forming Gas Anneal

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Keywords

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