Impurity-shifted intersubband transitions and screening in Na+-drifted Si MOSFETS

Evan Glaser; R. Czaputa; B. D. McCombe; Glen Kramer; R. F. Wallis

doi:10.1016/0039-6028(86)90991-X

Impurity-shifted intersubband transitions and screening in Na⁺-drifted Si MOSFETS

Evan Glaser
, R. Czaputa
, B. D. McCombe
, Glen Kramer
, R. F. Wallis

Physics

University at Buffalo

SUNY Buffalo
RTX Corporation
University of California at Irvine

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An investigation of "impurity-shifted" intersubband transitions in n-inversion layers of (100) Si MOSFETs whose oxides were purposely contaminated with mobile positive ions during processing has been carried out to study localization of electrons in two-dimensional systems. Results provide evidence for screening of the "impurity-shifted" transitions at high values of channel electron density.

Original language	English
Pages (from-to)	386-390
Number of pages	5
Journal	Surface Science
Volume	170
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(86)90991-X
State	Published - Apr 3 1986

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10.1016/0039-6028(86)90991-X

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abstract = "An investigation of {"}impurity-shifted{"} intersubband transitions in n-inversion layers of (100) Si MOSFETs whose oxides were purposely contaminated with mobile positive ions during processing has been carried out to study localization of electrons in two-dimensional systems. Results provide evidence for screening of the {"}impurity-shifted{"} transitions at high values of channel electron density.",

author = "Evan Glaser and R. Czaputa and McCombe, \{B. D.\} and Glen Kramer and Wallis, \{R. F.\}",

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T1 - Impurity-shifted intersubband transitions and screening in Na+-drifted Si MOSFETS

AU - Glaser, Evan

AU - Czaputa, R.

AU - McCombe, B. D.

AU - Kramer, Glen

AU - Wallis, R. F.

PY - 1986/4/3

Y1 - 1986/4/3

N2 - An investigation of "impurity-shifted" intersubband transitions in n-inversion layers of (100) Si MOSFETs whose oxides were purposely contaminated with mobile positive ions during processing has been carried out to study localization of electrons in two-dimensional systems. Results provide evidence for screening of the "impurity-shifted" transitions at high values of channel electron density.

AB - An investigation of "impurity-shifted" intersubband transitions in n-inversion layers of (100) Si MOSFETs whose oxides were purposely contaminated with mobile positive ions during processing has been carried out to study localization of electrons in two-dimensional systems. Results provide evidence for screening of the "impurity-shifted" transitions at high values of channel electron density.

UR - https://www.scopus.com/pages/publications/46149141400

U2 - 10.1016/0039-6028(86)90991-X

DO - 10.1016/0039-6028(86)90991-X

M3 - Article

SN - 0039-6028

VL - 170

SP - 386

EP - 390

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Impurity-shifted intersubband transitions and screening in Na⁺-drifted Si MOSFETS

Abstract

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