In-situ deposited HfO2with amorphous-Si passivation as a potential gate stack for high mobility (In)GaSb- Based P-MOSFETs

P. Nagaiah; V. Tokranov; M. Yakimov; S. Madisetti; A. Greene; S. Novak; R. Moore; H. Bakhru; S. Oktyabrsky

doi:10.1149/1.3633038

In-situ deposited HfO₂with amorphous-Si passivation as a potential gate stack for high mobility (In)GaSb- Based P-MOSFETs

P. Nagaiah
, V. Tokranov
, M. Yakimov
, S. Madisetti
, A. Greene
, S. Novak
, R. Moore
, H. Bakhru
, S. Oktyabrsky

University at Albany

SUNY Albany

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

Electrical and structural properties of GaSb metal-oxide-semiconductor capacitors with in-situ deposited HfO₂ gate dielectric and in-situ deposited amorphous silicon interface passivation layer are presented. Capacitance-voltage characteristics with low C-V stretch out, reduced hysteresis, lower EOT is obtained in a temperature range of 35°C-550°C post deposition annealing in forming gas. The gate leakage current of the gate stack was ≤ 1 μA/cm². p-MOSFETs fabricated on epitaxially grown strained (In)GaSb quantum channel (ε=1.6%) channels using this all in-situ high-k gate stack showed a maximum I_ON=23mA/mm for a 3μm gate length device.

Original language	English
Title of host publication	Physics and Technology of High-k Materials 9
Publisher	Electrochemical Society Inc.
Pages	223-230
Number of pages	8
Edition	3
ISBN (Electronic)	9781607682578
ISBN (Print)	9781566779036
DOIs	https://doi.org/10.1149/1.3633038
State	Published - 2011
Event	9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States Duration: Oct 10 2011 → Oct 12 2011

Publication series

Name	ECS Transactions
Number	3
Volume	41

Conference

Conference	9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/10/11 → 10/12/11

Access to Document

10.1149/1.3633038

Cite this

Nagaiah, P., Tokranov, V., Yakimov, M., Madisetti, S., Greene, A., Novak, S., Moore, R., Bakhru, H., & Oktyabrsky, S. (2011). In-situ deposited HfO₂with amorphous-Si passivation as a potential gate stack for high mobility (In)GaSb- Based P-MOSFETs. In Physics and Technology of High-k Materials 9 (3 ed., pp. 223-230). (ECS Transactions; Vol. 41, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3633038

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title = "In-situ deposited HfO2with amorphous-Si passivation as a potential gate stack for high mobility (In)GaSb- Based P-MOSFETs",

abstract = "Electrical and structural properties of GaSb metal-oxide-semiconductor capacitors with in-situ deposited HfO2 gate dielectric and in-situ deposited amorphous silicon interface passivation layer are presented. Capacitance-voltage characteristics with low C-V stretch out, reduced hysteresis, lower EOT is obtained in a temperature range of 35°C-550°C post deposition annealing in forming gas. The gate leakage current of the gate stack was ≤ 1 μA/cm2. p-MOSFETs fabricated on epitaxially grown strained (In)GaSb quantum channel (ε=1.6\%) channels using this all in-situ high-k gate stack showed a maximum ION=23mA/mm for a 3μm gate length device.",

author = "P. Nagaiah and V. Tokranov and M. Yakimov and S. Madisetti and A. Greene and S. Novak and R. Moore and H. Bakhru and S. Oktyabrsky",

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note = "9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting ; Conference date: 10-10-2011 Through 12-10-2011",

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Nagaiah, P, Tokranov, V , Yakimov, M, Madisetti, S, Greene, A, Novak, S, Moore, R, Bakhru, H & Oktyabrsky, S 2011, In-situ deposited HfO₂with amorphous-Si passivation as a potential gate stack for high mobility (In)GaSb- Based P-MOSFETs. in Physics and Technology of High-k Materials 9. 3 edn, ECS Transactions, no. 3, vol. 41, Electrochemical Society Inc., pp. 223-230, 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting, Boston, MA, United States, 10/10/11. https://doi.org/10.1149/1.3633038

In-situ deposited HfO₂with amorphous-Si passivation as a potential gate stack for high mobility (In)GaSb- Based P-MOSFETs. / Nagaiah, P.; Tokranov, V.; Yakimov, M. et al.
Physics and Technology of High-k Materials 9. 3. ed. Electrochemical Society Inc., 2011. p. 223-230 (ECS Transactions; Vol. 41, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Nagaiah, P.

AU - Tokranov, V.

AU - Yakimov, M.

AU - Madisetti, S.

AU - Greene, A.

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AU - Moore, R.

AU - Bakhru, H.

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N2 - Electrical and structural properties of GaSb metal-oxide-semiconductor capacitors with in-situ deposited HfO2 gate dielectric and in-situ deposited amorphous silicon interface passivation layer are presented. Capacitance-voltage characteristics with low C-V stretch out, reduced hysteresis, lower EOT is obtained in a temperature range of 35°C-550°C post deposition annealing in forming gas. The gate leakage current of the gate stack was ≤ 1 μA/cm2. p-MOSFETs fabricated on epitaxially grown strained (In)GaSb quantum channel (ε=1.6%) channels using this all in-situ high-k gate stack showed a maximum ION=23mA/mm for a 3μm gate length device.

AB - Electrical and structural properties of GaSb metal-oxide-semiconductor capacitors with in-situ deposited HfO2 gate dielectric and in-situ deposited amorphous silicon interface passivation layer are presented. Capacitance-voltage characteristics with low C-V stretch out, reduced hysteresis, lower EOT is obtained in a temperature range of 35°C-550°C post deposition annealing in forming gas. The gate leakage current of the gate stack was ≤ 1 μA/cm2. p-MOSFETs fabricated on epitaxially grown strained (In)GaSb quantum channel (ε=1.6%) channels using this all in-situ high-k gate stack showed a maximum ION=23mA/mm for a 3μm gate length device.

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