In-situ measurements of islanding and strain relaxation of Ge/Si(111)

P. W. Deelman; L. J. Schowalter; T. Thundat

In-situ measurements of islanding and strain relaxation of Ge/Si(111)

P. W. Deelman
, L. J. Schowalter
, T. Thundat

Department of Chemical and Biological Engineering

University at Buffalo

Rensselaer Polytechnic Institute

Research output: Contribution to journal › Conference article › peer-review

Abstract

The strain relaxation and islanding in Ge films grown by molecular beam epitaxy were measured using reflection high energy electron diffraction. A relaxation of the surface lattice parameters was observed at an initial rate of 0.5%/bilayers. The mechanisms of island growth and strain relaxation were dependent on the growth temperature. The initial rate of strain relaxation decreased with increasing temperature, while at low temperature, formation of small faceted islands with an aspect ratio of 0.07 was observed.

Original language	English
Pages (from-to)	373-378
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	441
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

Cite this

@article{a2117174aa1940e891037ad3bf452ffc,

title = "In-situ measurements of islanding and strain relaxation of Ge/Si(111)",

abstract = "The strain relaxation and islanding in Ge films grown by molecular beam epitaxy were measured using reflection high energy electron diffraction. A relaxation of the surface lattice parameters was observed at an initial rate of 0.5\%/bilayers. The mechanisms of island growth and strain relaxation were dependent on the growth temperature. The initial rate of strain relaxation decreased with increasing temperature, while at low temperature, formation of small faceted islands with an aspect ratio of 0.07 was observed.",

author = "Deelman, \{P. W.\} and Schowalter, \{L. J.\} and T. Thundat",

year = "1997",

language = "English",

volume = "441",

pages = "373--378",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - In-situ measurements of islanding and strain relaxation of Ge/Si(111)

AU - Deelman, P. W.

AU - Schowalter, L. J.

AU - Thundat, T.

PY - 1997

Y1 - 1997

N2 - The strain relaxation and islanding in Ge films grown by molecular beam epitaxy were measured using reflection high energy electron diffraction. A relaxation of the surface lattice parameters was observed at an initial rate of 0.5%/bilayers. The mechanisms of island growth and strain relaxation were dependent on the growth temperature. The initial rate of strain relaxation decreased with increasing temperature, while at low temperature, formation of small faceted islands with an aspect ratio of 0.07 was observed.

AB - The strain relaxation and islanding in Ge films grown by molecular beam epitaxy were measured using reflection high energy electron diffraction. A relaxation of the surface lattice parameters was observed at an initial rate of 0.5%/bilayers. The mechanisms of island growth and strain relaxation were dependent on the growth temperature. The initial rate of strain relaxation decreased with increasing temperature, while at low temperature, formation of small faceted islands with an aspect ratio of 0.07 was observed.

UR - https://www.scopus.com/pages/publications/0030652443

M3 - Conference article

SN - 0272-9172

VL - 441

SP - 373

EP - 378

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

In-situ measurements of islanding and strain relaxation of Ge/Si(111)

Abstract

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