InAs quantum dots in AlAs/GaAs short period superlattices: Structure, optical characteristics and laser diodes

Vadim Tokranov; M. Yakimov; A. Katsnelson; K. Dovidenko; R. Todt; S. Oktyabrsky

InAs quantum dots in AlAs/GaAs short period superlattices: Structure, optical characteristics and laser diodes

Vadim Tokranov
, M. Yakimov
, A. Katsnelson
, K. Dovidenko
, R. Todt
, S. Oktyabrsky

University at Albany

SUNY Albany

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The influence of two monolayer - thick AlAs under-and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under-and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×10¹⁰ cm^-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm² threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130 °C.

Original language	English
Pages (from-to)	135-140
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	692
State	Published - 2002
Event	Progress in Semiconductor Materials for Optoelectronic Applications - Boston, MA, United States Duration: Nov 26 2001 → Nov 29 2001

Cite this

@article{a7a74b183bfe4fa7b73ce64f99c2cb29,

title = "InAs quantum dots in AlAs/GaAs short period superlattices: Structure, optical characteristics and laser diodes",

abstract = "The influence of two monolayer - thick AlAs under-and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under-and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130 °C.",

author = "Vadim Tokranov and M. Yakimov and A. Katsnelson and K. Dovidenko and R. Todt and S. Oktyabrsky",

year = "2002",

language = "English",

volume = "692",

pages = "135--140",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Progress in Semiconductor Materials for Optoelectronic Applications ; Conference date: 26-11-2001 Through 29-11-2001",

}

TY - JOUR

T1 - InAs quantum dots in AlAs/GaAs short period superlattices

T2 - Progress in Semiconductor Materials for Optoelectronic Applications

AU - Tokranov, Vadim

AU - Yakimov, M.

AU - Katsnelson, A.

AU - Dovidenko, K.

AU - Todt, R.

AU - Oktyabrsky, S.

PY - 2002

Y1 - 2002

N2 - The influence of two monolayer - thick AlAs under-and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under-and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130 °C.

AB - The influence of two monolayer - thick AlAs under-and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under-and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130 °C.

UR - https://www.scopus.com/pages/publications/0036056694

M3 - Conference article

SN - 0272-9172

VL - 692

SP - 135

EP - 140

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 26 November 2001 through 29 November 2001

ER -

InAs quantum dots in AlAs/GaAs short period superlattices: Structure, optical characteristics and laser diodes

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