TY - GEN
T1 - Incidence angle-dependent transport across a single graphene p-n junction
AU - Sutar, Surajit
AU - Comfort, Everett
AU - Lee, Ji Ung
PY - 2011
Y1 - 2011
N2 - Graphene p-n junction (GPNJ) can be used to build logic, using the incidence-angle-dependent carrier transmission [1]. This report presents a method to gate Graphene by buried split-gates (SG) which enable precise control of the doping profiles by the SG spacing. The main result of the report is that even at T 300K and modest graphene mobility, the GPNJ resistance shows a significant variation with incidence angle, indicating carrier chirality effects.
AB - Graphene p-n junction (GPNJ) can be used to build logic, using the incidence-angle-dependent carrier transmission [1]. This report presents a method to gate Graphene by buried split-gates (SG) which enable precise control of the doping profiles by the SG spacing. The main result of the report is that even at T 300K and modest graphene mobility, the GPNJ resistance shows a significant variation with incidence angle, indicating carrier chirality effects.
UR - https://www.scopus.com/pages/publications/84863169475
U2 - 10.1109/ISDRS.2011.6135258
DO - 10.1109/ISDRS.2011.6135258
M3 - Conference contribution
SN - 9781457717550
T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
T2 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
Y2 - 7 December 2011 through 9 December 2011
ER -