INFLUENCE OF DESIGN VARIABLES ON RADIATION HARDNESS OF SILICON MINP SOLAR CELLS.

W. A. Anderson; S. Solaun; B. B. Rao; S. Banerjee

INFLUENCE OF DESIGN VARIABLES ON RADIATION HARDNESS OF SILICON MINP SOLAR CELLS.

W. A. Anderson
, S. Solaun
, B. B. Rao
, S. Banerjee

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0. 3 OMEGA -cm substrate gave best efficiency whereas a deeper junction into a 1-4 OMEGA -cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

Original language	English
Pages (from-to)	147-158
Number of pages	12
Journal	NASA Conference Publication
State	Published - 1985

Cite this

@article{5945483f3a2b41628e3d911fbb14a283,

title = "INFLUENCE OF DESIGN VARIABLES ON RADIATION HARDNESS OF SILICON MINP SOLAR CELLS.",

abstract = "Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0. 3 OMEGA -cm substrate gave best efficiency whereas a deeper junction into a 1-4 OMEGA -cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.",

author = "Anderson, \{W. A.\} and S. Solaun and Rao, \{B. B.\} and S. Banerjee",

year = "1985",

language = "English",

pages = "147--158",

journal = "NASA Conference Publication",

issn = "0191-7811",

}

TY - JOUR

T1 - INFLUENCE OF DESIGN VARIABLES ON RADIATION HARDNESS OF SILICON MINP SOLAR CELLS.

AU - Anderson, W. A.

AU - Solaun, S.

AU - Rao, B. B.

AU - Banerjee, S.

PY - 1985

Y1 - 1985

N2 - Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0. 3 OMEGA -cm substrate gave best efficiency whereas a deeper junction into a 1-4 OMEGA -cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

AB - Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0. 3 OMEGA -cm substrate gave best efficiency whereas a deeper junction into a 1-4 OMEGA -cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

UR - https://www.scopus.com/pages/publications/0022314672

M3 - Conference article

SN - 0191-7811

SP - 147

EP - 158

JO - NASA Conference Publication

JF - NASA Conference Publication

ER -

INFLUENCE OF DESIGN VARIABLES ON RADIATION HARDNESS OF SILICON MINP SOLAR CELLS.

Abstract

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