TY - GEN
T1 - Influence of Doping on the Electromigration Performance of SAC Solder Alloys on BGA Components
AU - Deo, Karthik Arun
AU - Yang, Junbo
AU - Lai, Yangyang
AU - Yang, Dalei
AU - Park, S. B.
N1 - Publisher Copyright: © 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - In the past few decades, the electronics industry has been moving towards Pb-free solder materials because of several reasons, primarily related to health, environmental and regulatory changes. SAC305 has proven to be a great replacement since it provides the mechanical strength and damage resistance. However, due to fast paced growth of the industry and the urge to miniaturize the electronic components, the need for more reliable solder alloys have caught some attention. The influence of doping SAC-305 solder alloy with different elements such as Bi, Sb, Ni, In have been explored have shown an improvement in tensile and shear strength and also a reduction in IMC growth, which are advantageous in the perspective of thermal fatigue reliability. However, the electromigration behavior and failure modes have not been explored at an assembly level by many. In this study, we explore three different doped solder alloys and compare their electromigration performance. The EM tests were done at 120° C with 0.61 × 10^4 A cm2. current density. It was observed that the presence of void drastically impacts the EM life time. Addition of Sb to SAC reduces the EM lifetime, however the addition of Sb, Bi, Ni and In shows an improvement.
AB - In the past few decades, the electronics industry has been moving towards Pb-free solder materials because of several reasons, primarily related to health, environmental and regulatory changes. SAC305 has proven to be a great replacement since it provides the mechanical strength and damage resistance. However, due to fast paced growth of the industry and the urge to miniaturize the electronic components, the need for more reliable solder alloys have caught some attention. The influence of doping SAC-305 solder alloy with different elements such as Bi, Sb, Ni, In have been explored have shown an improvement in tensile and shear strength and also a reduction in IMC growth, which are advantageous in the perspective of thermal fatigue reliability. However, the electromigration behavior and failure modes have not been explored at an assembly level by many. In this study, we explore three different doped solder alloys and compare their electromigration performance. The EM tests were done at 120° C with 0.61 × 10^4 A cm2. current density. It was observed that the presence of void drastically impacts the EM life time. Addition of Sb to SAC reduces the EM lifetime, however the addition of Sb, Bi, Ni and In shows an improvement.
KW - 2 level BGA reliability
KW - Antinomy
KW - BGA packages
KW - Bismuth
KW - ENIG surface
KW - Electromigration
KW - Indium
KW - SAC305
KW - reliability
UR - https://www.scopus.com/pages/publications/105010657733
U2 - 10.1109/ECTC51687.2025.00241
DO - 10.1109/ECTC51687.2025.00241
M3 - Conference contribution
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1405
EP - 1411
BT - Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 75th IEEE Electronic Components and Technology Conference, ECTC 2025
Y2 - 27 May 2025 through 30 May 2025
ER -