InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO 2 gate oxide and a-Si interface passivation layer

Serge Oktyabrsky; Sergei Koveshnikov; Vadim Tokranov; Michael Yakimov; Rama Kambhampati; Hassaram Bakhru; Feng Zhu; Jack Lee; Wilman Tsai

doi:10.1109/DRC.2007.4373718

InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO ₂ gate oxide and a-Si interface passivation layer

Serge Oktyabrsky
, Sergei Koveshnikov
, Vadim Tokranov
, Michael Yakimov
, Rama Kambhampati
, Hassaram Bakhru
, Feng Zhu
, Jack Lee
, Wilman Tsai

University at Albany

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Original language	English
Title of host publication	65th DRC Device Research Conference
Pages	203-204
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373718
State	Published - 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name	65th DRC Device Research Conference

Conference

Conference	65th DRC Device Research Conference
Country/Territory	India
City	South Bend
Period	06/18/07 → 06/20/07

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10.1109/DRC.2007.4373718

Cite this

Oktyabrsky, S., Koveshnikov, S., Tokranov, V., Yakimov, M., Kambhampati, R., Bakhru, H., Zhu, F., Lee, J., & Tsai, W. (2007). InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO ₂ gate oxide and a-Si interface passivation layer. In 65th DRC Device Research Conference (pp. 203-204). Article 4373718 (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373718

@inproceedings{49073ef1855e4b0dbb7ac5d2e3230d60,

title = "InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO 2 gate oxide and a-Si interface passivation layer",

author = "Serge Oktyabrsky and Sergei Koveshnikov and Vadim Tokranov and Michael Yakimov and Rama Kambhampati and Hassaram Bakhru and Feng Zhu and Jack Lee and Wilman Tsai",

year = "2007",

doi = "10.1109/DRC.2007.4373718",

language = "English",

isbn = "1424411025",

series = "65th DRC Device Research Conference",

pages = "203--204",

booktitle = "65th DRC Device Research Conference",

note = "65th DRC Device Research Conference ; Conference date: 18-06-2007 Through 20-06-2007",

}

Oktyabrsky, S, Koveshnikov, S, Tokranov, V , Yakimov, M, Kambhampati, R, Bakhru, H, Zhu, F, Lee, J & Tsai, W 2007, InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO ₂ gate oxide and a-Si interface passivation layer. in 65th DRC Device Research Conference., 4373718, 65th DRC Device Research Conference, pp. 203-204, 65th DRC Device Research Conference, South Bend, India, 06/18/07. https://doi.org/10.1109/DRC.2007.4373718

InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO ₂ gate oxide and a-Si interface passivation layer. / Oktyabrsky, Serge; Koveshnikov, Sergei; Tokranov, Vadim et al.
65th DRC Device Research Conference. 2007. p. 203-204 4373718 (65th DRC Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO 2 gate oxide and a-Si interface passivation layer

AU - Oktyabrsky, Serge

AU - Koveshnikov, Sergei

AU - Tokranov, Vadim

AU - Yakimov, Michael

AU - Kambhampati, Rama

AU - Bakhru, Hassaram

AU - Zhu, Feng

AU - Lee, Jack

AU - Tsai, Wilman

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/47249143400

U2 - 10.1109/DRC.2007.4373718

DO - 10.1109/DRC.2007.4373718

M3 - Conference contribution

SN - 1424411025

SN - 9781424411023

T3 - 65th DRC Device Research Conference

SP - 203

EP - 204

BT - 65th DRC Device Research Conference

T2 - 65th DRC Device Research Conference

Y2 - 18 June 2007 through 20 June 2007

ER -

InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO ₂ gate oxide and a-Si interface passivation layer

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