Inherently radiation hardened electronics: An examination of III-V nanowire transistors and spin-based logic devices

Donald A. Telesca; Ashwani Sharma; Clay Mayberry; Hanan Deryb; Hui Wu; Berkehan Ciftcioglu; Michael Huang; Yang Song; Roland Kawakami; Jing Shi; Ilya Krivorotov; Igor Zutic; Lu J. Sham

Inherently radiation hardened electronics: An examination of III-V nanowire transistors and spin-based logic devices

Donald A. Telesca
, Ashwani Sharma
, Clay Mayberry
, Hanan Deryb
, Hui Wu
, Berkehan Ciftcioglu
, Michael Huang
, Yang Song
, Roland Kawakami
, Jing Shi
, Ilya Krivorotov
, Igor Zutic
, Lu J. Sham

Physics

University at Buffalo

Air Force Research Laboratory
University of Rochester
University of California at Riverside
University of California at Irvine
University of California at San Diego

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents novel design concepts currently pursued for the realization of inherently radiation hardened electronics. All-around gate oxide nano-wire transistors made from Si and III-V materials, are the first innovation examined. The carriers in these nanowires have dramatically increased mobility which can be used to increase processing speed, while the transistor geometry provides an avenue for inherent radiation hardness. Secondly, this work will discuss the development of a spin-based magneto-logic search engine. The manner in which the logic is written has the potential to be radiation hardened in addition to being nonvolatile. Realization of this type of logic will have an impact on both space electronics, as well as current terrestrial electronics.

Original language	English
Title of host publication	Nanotechnology 2012
Subtitle of host publication	Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages	9-12
Number of pages	4
State	Published - 2012
Event	Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States Duration: Jun 18 2012 → Jun 21 2012

Publication series

Name	Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Conference

Conference	Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Country/Territory	United States
City	Santa Clara, CA
Period	06/18/12 → 06/21/12

Keywords

Magneto-logic gates
Nano-wire transistors
Radiation hardened electronics

Cite this

Telesca, D. A., Sharma, A., Mayberry, C., Deryb, H., Wu, H., Ciftcioglu, B., Huang, M., Song, Y., Kawakami, R., Shi, J., Krivorotov, I., Zutic, I., & Sham, L. J. (2012). Inherently radiation hardened electronics: An examination of III-V nanowire transistors and spin-based logic devices. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 (pp. 9-12). (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

Telesca, Donald A. ; Sharma, Ashwani ; Mayberry, Clay et al. / Inherently radiation hardened electronics : An examination of III-V nanowire transistors and spin-based logic devices. Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. pp. 9-12 (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

@inproceedings{f0a4b6d2d3504a20b4b915f7a8a9fd0e,

title = "Inherently radiation hardened electronics: An examination of III-V nanowire transistors and spin-based logic devices",

abstract = "This paper presents novel design concepts currently pursued for the realization of inherently radiation hardened electronics. All-around gate oxide nano-wire transistors made from Si and III-V materials, are the first innovation examined. The carriers in these nanowires have dramatically increased mobility which can be used to increase processing speed, while the transistor geometry provides an avenue for inherent radiation hardness. Secondly, this work will discuss the development of a spin-based magneto-logic search engine. The manner in which the logic is written has the potential to be radiation hardened in addition to being nonvolatile. Realization of this type of logic will have an impact on both space electronics, as well as current terrestrial electronics.",

keywords = "Magneto-logic gates, Nano-wire transistors, Radiation hardened electronics",

author = "Telesca, \{Donald A.\} and Ashwani Sharma and Clay Mayberry and Hanan Deryb and Hui Wu and Berkehan Ciftcioglu and Michael Huang and Yang Song and Roland Kawakami and Jing Shi and Ilya Krivorotov and Igor Zutic and Sham, \{Lu J.\}",

year = "2012",

language = "English",

isbn = "9781466562752",

series = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",

pages = "9--12",

booktitle = "Nanotechnology 2012",

note = "Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 ; Conference date: 18-06-2012 Through 21-06-2012",

}

Telesca, DA, Sharma, A, Mayberry, C, Deryb, H, Wu, H, Ciftcioglu, B, Huang, M, Song, Y, Kawakami, R, Shi, J, Krivorotov, I, Zutic, I & Sham, LJ 2012, Inherently radiation hardened electronics: An examination of III-V nanowire transistors and spin-based logic devices. in Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, pp. 9-12, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, United States, 06/18/12.

Inherently radiation hardened electronics: An examination of III-V nanowire transistors and spin-based logic devices. / Telesca, Donald A.; Sharma, Ashwani; Mayberry, Clay et al.
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 9-12 (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Inherently radiation hardened electronics

T2 - Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

AU - Telesca, Donald A.

AU - Sharma, Ashwani

AU - Mayberry, Clay

AU - Deryb, Hanan

AU - Wu, Hui

AU - Ciftcioglu, Berkehan

AU - Huang, Michael

AU - Song, Yang

AU - Kawakami, Roland

AU - Shi, Jing

AU - Krivorotov, Ilya

AU - Zutic, Igor

AU - Sham, Lu J.

PY - 2012

Y1 - 2012

N2 - This paper presents novel design concepts currently pursued for the realization of inherently radiation hardened electronics. All-around gate oxide nano-wire transistors made from Si and III-V materials, are the first innovation examined. The carriers in these nanowires have dramatically increased mobility which can be used to increase processing speed, while the transistor geometry provides an avenue for inherent radiation hardness. Secondly, this work will discuss the development of a spin-based magneto-logic search engine. The manner in which the logic is written has the potential to be radiation hardened in addition to being nonvolatile. Realization of this type of logic will have an impact on both space electronics, as well as current terrestrial electronics.

AB - This paper presents novel design concepts currently pursued for the realization of inherently radiation hardened electronics. All-around gate oxide nano-wire transistors made from Si and III-V materials, are the first innovation examined. The carriers in these nanowires have dramatically increased mobility which can be used to increase processing speed, while the transistor geometry provides an avenue for inherent radiation hardness. Secondly, this work will discuss the development of a spin-based magneto-logic search engine. The manner in which the logic is written has the potential to be radiation hardened in addition to being nonvolatile. Realization of this type of logic will have an impact on both space electronics, as well as current terrestrial electronics.

KW - Magneto-logic gates

KW - Nano-wire transistors

KW - Radiation hardened electronics

UR - https://www.scopus.com/pages/publications/84864943271

M3 - Conference contribution

SN - 9781466562752

T3 - Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

SP - 9

EP - 12

BT - Nanotechnology 2012

Y2 - 18 June 2012 through 21 June 2012

ER -

Telesca DA, Sharma A, Mayberry C, Deryb H, Wu H, Ciftcioglu B et al. Inherently radiation hardened electronics: An examination of III-V nanowire transistors and spin-based logic devices. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 9-12. (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

Inherently radiation hardened electronics: An examination of III-V nanowire transistors and spin-based logic devices

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Publication series

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Keywords

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