Integration study of benzocyclobutene with CVD-based aluminum metallization

H. Gundlach; A. Knorr; S. Nijsten; K. Kumar; Z. Bian; R. Talevi; E. O. Shaffer; A. E. Kaloyeros; R. E. Geer

doi:10.1109/IITC.1998.704922

Integration study of benzocyclobutene with CVD-based aluminum metallization

H. Gundlach
, A. Knorr
, S. Nijsten
, K. Kumar
, Z. Bian
, R. Talevi
, E. O. Shaffer
, A. E. Kaloyeros
, R. E. Geer

Nanoscale Science and Engineering

University at Albany

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Aluminum/liner binary stacks have been deposited on blanket and patterned films of benzocyclobutene (BCB) polymer to investigate its integration into an all-Aluminum multilevel wiring structure. Blanket stacks were characterized for structural properties and reliability. Metallized patterned films were analyzed for gap filling of 0.30 μm trenches. Aluminum was deposited via chemical vapor deposition (CVD). Titanium nitride liners were deposited via collimated reactive sputtering.

Original language	English
Title of host publication	Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	277-279
Number of pages	3
ISBN (Electronic)	0780342852, 9780780342859
DOIs	https://doi.org/10.1109/IITC.1998.704922
State	Published - 1998
Event	1998 IEEE International Interconnect Technology Conference, IITC 1998 - San Firancisco, United States Duration: Jun 1 1998 → Jun 3 1998

Publication series

Name	Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
Volume	1998-June

Conference

Conference	1998 IEEE International Interconnect Technology Conference, IITC 1998
Country/Territory	United States
City	San Firancisco
Period	06/1/98 → 06/3/98

Access to Document

10.1109/IITC.1998.704922

Cite this

Gundlach, H., Knorr, A., Nijsten, S., Kumar, K., Bian, Z., Talevi, R., Shaffer, E. O., Kaloyeros, A. E., & Geer, R. E. (1998). Integration study of benzocyclobutene with CVD-based aluminum metallization. In Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998 (pp. 277-279). (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998; Vol. 1998-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.1998.704922

Gundlach, H. ; Knorr, A. ; Nijsten, S. et al. / Integration study of benzocyclobutene with CVD-based aluminum metallization. Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 277-279 (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998).

@inproceedings{4dea13fd77c34801866ad046f87a5bd7,

title = "Integration study of benzocyclobutene with CVD-based aluminum metallization",

abstract = "Aluminum/liner binary stacks have been deposited on blanket and patterned films of benzocyclobutene (BCB) polymer to investigate its integration into an all-Aluminum multilevel wiring structure. Blanket stacks were characterized for structural properties and reliability. Metallized patterned films were analyzed for gap filling of 0.30 μm trenches. Aluminum was deposited via chemical vapor deposition (CVD). Titanium nitride liners were deposited via collimated reactive sputtering.",

author = "H. Gundlach and A. Knorr and S. Nijsten and K. Kumar and Z. Bian and R. Talevi and Shaffer, \{E. O.\} and Kaloyeros, \{A. E.\} and Geer, \{R. E.\}",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 1998 IEEE International Interconnect Technology Conference, IITC 1998 ; Conference date: 01-06-1998 Through 03-06-1998",

year = "1998",

doi = "10.1109/IITC.1998.704922",

language = "English",

series = "Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "277--279",

booktitle = "Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998",

}

Gundlach, H, Knorr, A, Nijsten, S, Kumar, K, Bian, Z, Talevi, R, Shaffer, EO, Kaloyeros, AE & Geer, RE 1998, Integration study of benzocyclobutene with CVD-based aluminum metallization. in Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998, vol. 1998-June, Institute of Electrical and Electronics Engineers Inc., pp. 277-279, 1998 IEEE International Interconnect Technology Conference, IITC 1998, San Firancisco, United States, 06/1/98. https://doi.org/10.1109/IITC.1998.704922

Integration study of benzocyclobutene with CVD-based aluminum metallization. / Gundlach, H.; Knorr, A.; Nijsten, S. et al.
Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Institute of Electrical and Electronics Engineers Inc., 1998. p. 277-279 (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998; Vol. 1998-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Integration study of benzocyclobutene with CVD-based aluminum metallization

AU - Gundlach, H.

AU - Knorr, A.

AU - Nijsten, S.

AU - Kumar, K.

AU - Bian, Z.

AU - Talevi, R.

AU - Shaffer, E. O.

AU - Kaloyeros, A. E.

AU - Geer, R. E.

PY - 1998

Y1 - 1998

N2 - Aluminum/liner binary stacks have been deposited on blanket and patterned films of benzocyclobutene (BCB) polymer to investigate its integration into an all-Aluminum multilevel wiring structure. Blanket stacks were characterized for structural properties and reliability. Metallized patterned films were analyzed for gap filling of 0.30 μm trenches. Aluminum was deposited via chemical vapor deposition (CVD). Titanium nitride liners were deposited via collimated reactive sputtering.

AB - Aluminum/liner binary stacks have been deposited on blanket and patterned films of benzocyclobutene (BCB) polymer to investigate its integration into an all-Aluminum multilevel wiring structure. Blanket stacks were characterized for structural properties and reliability. Metallized patterned films were analyzed for gap filling of 0.30 μm trenches. Aluminum was deposited via chemical vapor deposition (CVD). Titanium nitride liners were deposited via collimated reactive sputtering.

UR - https://www.scopus.com/pages/publications/0343226634

U2 - 10.1109/IITC.1998.704922

DO - 10.1109/IITC.1998.704922

M3 - Conference contribution

T3 - Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

SP - 277

EP - 279

BT - Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1998 IEEE International Interconnect Technology Conference, IITC 1998

Y2 - 1 June 1998 through 3 June 1998

ER -

Gundlach H, Knorr A, Nijsten S, Kumar K, Bian Z, Talevi R et al. Integration study of benzocyclobutene with CVD-based aluminum metallization. In Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 277-279. (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998). doi: 10.1109/IITC.1998.704922

Integration study of benzocyclobutene with CVD-based aluminum metallization

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