@inproceedings{660c9ceb83b74af192b122618cdcd8f8,
title = "Interface for cryogenic-processed metal/Inp",
abstract = "Au and Pd Schottky contacts to n-InP produce extremely high barrier heights and low leakage currents when deposition is on a substrate cooled to 77K. Extensive chemical and structural analyses indicate that this process causes the metal film to be continuous at 50Angstrom, much better than in standard processing. Stoichiometry of InP near he surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.",
author = "L. He and Anderson, \{W. A.\} and J. Palmer and Z. Shi",
year = "1994",
language = "English",
isbn = "1558992170",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "141--146",
editor = "Peter Borgesen and Jensen, \{Klavs F.\} and Pollak, \{Roger A.\}",
booktitle = "Interface Control of Electrical, Chemical, and Mechanical Properties",
note = "Proceedings of the Fall 1993 MRS Meeting ; Conference date: 29-11-1993 Through 03-12-1993",
}