Interface phonons in semiconductor double heterostructures

D. L. Lin; R. Chen; T. F. George

doi:10.1016/0038-1098(90)90173-9

Interface phonons in semiconductor double heterostructures

D. L. Lin
, R. Chen
, T. F. George

Physics

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Within the framework of the continuum model, the equation of motion for the polarization vector in a semiconductor double heterostructure is solved exactly for the interface phonon modes. Both the eigenvectors and dispersion relations are obtained analytically. It is shown that the slab modes observed in right-angle Raman scattering in a GaAs quantum can be understood in terms of the interface modes found in this paper.

Original language	English
Pages (from-to)	799-802
Number of pages	4
Journal	Solid State Communications
Volume	73
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(90)90173-9
State	Published - Mar 1990

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title = "Interface phonons in semiconductor double heterostructures",

abstract = "Within the framework of the continuum model, the equation of motion for the polarization vector in a semiconductor double heterostructure is solved exactly for the interface phonon modes. Both the eigenvectors and dispersion relations are obtained analytically. It is shown that the slab modes observed in right-angle Raman scattering in a GaAs quantum can be understood in terms of the interface modes found in this paper.",

author = "Lin, \{D. L.\} and R. Chen and George, \{T. F.\}",

year = "1990",

month = mar,

doi = "10.1016/0038-1098(90)90173-9",

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T1 - Interface phonons in semiconductor double heterostructures

AU - Lin, D. L.

AU - Chen, R.

AU - George, T. F.

PY - 1990/3

Y1 - 1990/3

N2 - Within the framework of the continuum model, the equation of motion for the polarization vector in a semiconductor double heterostructure is solved exactly for the interface phonon modes. Both the eigenvectors and dispersion relations are obtained analytically. It is shown that the slab modes observed in right-angle Raman scattering in a GaAs quantum can be understood in terms of the interface modes found in this paper.

AB - Within the framework of the continuum model, the equation of motion for the polarization vector in a semiconductor double heterostructure is solved exactly for the interface phonon modes. Both the eigenvectors and dispersion relations are obtained analytically. It is shown that the slab modes observed in right-angle Raman scattering in a GaAs quantum can be understood in terms of the interface modes found in this paper.

UR - https://www.scopus.com/pages/publications/0025398582

U2 - 10.1016/0038-1098(90)90173-9

DO - 10.1016/0038-1098(90)90173-9

M3 - Article

SN - 0038-1098

VL - 73

SP - 799

EP - 802

JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -

Interface phonons in semiconductor double heterostructures

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