Internal transitions of neutral and charged magneto-excitons in GaAs/AlGaAs quantum wells

H. A. Nickel; G. S. Herold; T. Yeo; G. Kioseoglou; Z. X. Jiang; B. D. McCombe; A. Petrou; D. Broido; W. Schaff

doi:10.1002/(SICI)1521-3951(199812)210:2

Internal transitions of neutral and charged magneto-excitons in GaAs/AlGaAs quantum wells

H. A. Nickel
, G. S. Herold
, T. Yeo
, G. Kioseoglou
, Z. X. Jiang
, B. D. McCombe
, A. Petrou
, D. Broido
, W. Schaff

Physics

University at Buffalo

SUNY Buffalo
Boston College
Cornell University

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We have used Optically Detected Resonance (ODR) spectroscopy to probe the electronic properties of undoped and barrier-doped GaAs/Al_0.3Ga_0.7As multiple-quantum-well (MQW) samples with well widths between 12.5 and 20 nm in magnetic fields up to 15 T at low temperatures. The simultaneous observation of electron and hole CR along with several internal transitions of neutral excitons (IETs) verifies the symmetry-related energy differences of the internal transitions to differences between electron and hole CR. The observed degeneracy of the 1s → 2p⁺ IET from the two radiative magneto-excitons is due to the very small electron g-factor. ODR measurements on 20 nm wide MQWs (not-intentionally- and barrier-doped) exhibit transitions of the negatively charged excitonic complex.

Original language	English
Pages (from-to)	341-346
Number of pages	6
Journal	Physica Status Solidi (B) Basic Research
Volume	210
Issue number	2
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199812)210:2
State	Published - Dec 1998

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10.1002/(SICI)1521-3951(199812)210:2

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title = "Internal transitions of neutral and charged magneto-excitons in GaAs/AlGaAs quantum wells",

abstract = "We have used Optically Detected Resonance (ODR) spectroscopy to probe the electronic properties of undoped and barrier-doped GaAs/Al0.3Ga0.7As multiple-quantum-well (MQW) samples with well widths between 12.5 and 20 nm in magnetic fields up to 15 T at low temperatures. The simultaneous observation of electron and hole CR along with several internal transitions of neutral excitons (IETs) verifies the symmetry-related energy differences of the internal transitions to differences between electron and hole CR. The observed degeneracy of the 1s → 2p+ IET from the two radiative magneto-excitons is due to the very small electron g-factor. ODR measurements on 20 nm wide MQWs (not-intentionally- and barrier-doped) exhibit transitions of the negatively charged excitonic complex.",

author = "Nickel, \{H. A.\} and Herold, \{G. S.\} and T. Yeo and G. Kioseoglou and Jiang, \{Z. X.\} and McCombe, \{B. D.\} and A. Petrou and D. Broido and W. Schaff",

year = "1998",

month = dec,

doi = "10.1002/(SICI)1521-3951(199812)210:2",

language = "English",

volume = "210",

pages = "341--346",

journal = "Physica Status Solidi (B) Basic Research",

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TY - JOUR

T1 - Internal transitions of neutral and charged magneto-excitons in GaAs/AlGaAs quantum wells

AU - Nickel, H. A.

AU - Herold, G. S.

AU - Yeo, T.

AU - Kioseoglou, G.

AU - Jiang, Z. X.

AU - McCombe, B. D.

AU - Petrou, A.

AU - Broido, D.

AU - Schaff, W.

PY - 1998/12

Y1 - 1998/12

N2 - We have used Optically Detected Resonance (ODR) spectroscopy to probe the electronic properties of undoped and barrier-doped GaAs/Al0.3Ga0.7As multiple-quantum-well (MQW) samples with well widths between 12.5 and 20 nm in magnetic fields up to 15 T at low temperatures. The simultaneous observation of electron and hole CR along with several internal transitions of neutral excitons (IETs) verifies the symmetry-related energy differences of the internal transitions to differences between electron and hole CR. The observed degeneracy of the 1s → 2p+ IET from the two radiative magneto-excitons is due to the very small electron g-factor. ODR measurements on 20 nm wide MQWs (not-intentionally- and barrier-doped) exhibit transitions of the negatively charged excitonic complex.

AB - We have used Optically Detected Resonance (ODR) spectroscopy to probe the electronic properties of undoped and barrier-doped GaAs/Al0.3Ga0.7As multiple-quantum-well (MQW) samples with well widths between 12.5 and 20 nm in magnetic fields up to 15 T at low temperatures. The simultaneous observation of electron and hole CR along with several internal transitions of neutral excitons (IETs) verifies the symmetry-related energy differences of the internal transitions to differences between electron and hole CR. The observed degeneracy of the 1s → 2p+ IET from the two radiative magneto-excitons is due to the very small electron g-factor. ODR measurements on 20 nm wide MQWs (not-intentionally- and barrier-doped) exhibit transitions of the negatively charged excitonic complex.

UR - https://www.scopus.com/pages/publications/0032282693

U2 - 10.1002/(SICI)1521-3951(199812)210:2

DO - 10.1002/(SICI)1521-3951(199812)210:2

M3 - Article

SN - 0370-1972

VL - 210

SP - 341

EP - 346

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 2

ER -

Internal transitions of neutral and charged magneto-excitons in GaAs/AlGaAs quantum wells

Abstract

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