Intersubband spectroscopy of inversion layers in the principal surfaces of silicon: Many-body and “impurity” effects

B. D. McCombe; Teresa Cole

doi:10.1016/0039-6028(80)90528-2

Intersubband spectroscopy of inversion layers in the principal surfaces of silicon: Many-body and “impurity” effects

B. D. McCombe
, Teresa Cole

Physics

University at Buffalo

Naval Research Laboratory

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Frequency domain studies of intersubband transitions have been carried out with a FIR Fourier Transform Spectrometer. The experimental techniques have been applied to several studies including subband spectroscopy in (100) and vicinal planes, and in (111) and (110) inersion layers as well as the effects of oxide charge on the optical properties of (100) inversion layers.

Original language	English
Pages (from-to)	469-480
Number of pages	12
Journal	Surface Science
Volume	98
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(80)90528-2
State	Published - 1980

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10.1016/0039-6028(80)90528-2

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title = "Intersubband spectroscopy of inversion layers in the principal surfaces of silicon: Many-body and “impurity” effects",

abstract = "Frequency domain studies of intersubband transitions have been carried out with a FIR Fourier Transform Spectrometer. The experimental techniques have been applied to several studies including subband spectroscopy in (100) and vicinal planes, and in (111) and (110) inersion layers as well as the effects of oxide charge on the optical properties of (100) inversion layers.",

author = "McCombe, \{B. D.\} and Teresa Cole",

year = "1980",

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T1 - Intersubband spectroscopy of inversion layers in the principal surfaces of silicon

T2 - Many-body and “impurity” effects

AU - McCombe, B. D.

AU - Cole, Teresa

PY - 1980

Y1 - 1980

N2 - Frequency domain studies of intersubband transitions have been carried out with a FIR Fourier Transform Spectrometer. The experimental techniques have been applied to several studies including subband spectroscopy in (100) and vicinal planes, and in (111) and (110) inersion layers as well as the effects of oxide charge on the optical properties of (100) inversion layers.

AB - Frequency domain studies of intersubband transitions have been carried out with a FIR Fourier Transform Spectrometer. The experimental techniques have been applied to several studies including subband spectroscopy in (100) and vicinal planes, and in (111) and (110) inersion layers as well as the effects of oxide charge on the optical properties of (100) inversion layers.

UR - https://www.scopus.com/pages/publications/84996385673

U2 - 10.1016/0039-6028(80)90528-2

DO - 10.1016/0039-6028(80)90528-2

M3 - Article

SN - 0039-6028

VL - 98

SP - 469

EP - 480

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Intersubband spectroscopy of inversion layers in the principal surfaces of silicon: Many-body and “impurity” effects

Abstract

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