Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW

L. E. Vorobjev; S. N. Danilov; D. V. Donetsky; D. A. Firsov; E. Towe; R. Kh Zhukavin; S. G. Pavlov; V. N. Shastin

doi:10.1016/S0921-4526(99)00275-6

Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW

L. E. Vorobjev
, S. N. Danilov
, D. V. Donetsky
, D. A. Firsov
, E. Towe
, R. Kh Zhukavin
, S. G. Pavlov
, V. N. Shastin

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The absorption and emission of terahertz radiation connected with intrasubband transitions of hot electrons in GaAs/AlGaAs quantum well structures are investigated experimentally and theoretically. The emission spectra in the spectral range 80-300 μm were obtained. Absorption coefficient and emission spectra were calculated taking into account acoustic and optical phonon (including nonequilibrium phonons), impurity and interface roughness scattering. The temperature of hot electrons was obtained from comparison between calculated and experimentally observed emission spectra.

Original language	English
Pages (from-to)	223-225
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00275-6
State	Published - Dec 1 1999
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: Jul 19 1999 → Jul 23 1999

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10.1016/S0921-4526(99)00275-6

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title = "Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW",

abstract = "The absorption and emission of terahertz radiation connected with intrasubband transitions of hot electrons in GaAs/AlGaAs quantum well structures are investigated experimentally and theoretically. The emission spectra in the spectral range 80-300 μm were obtained. Absorption coefficient and emission spectra were calculated taking into account acoustic and optical phonon (including nonequilibrium phonons), impurity and interface roughness scattering. The temperature of hot electrons was obtained from comparison between calculated and experimentally observed emission spectra.",

author = "Vorobjev, \{L. E.\} and Danilov, \{S. N.\} and Donetsky, \{D. V.\} and Firsov, \{D. A.\} and E. Towe and Zhukavin, \{R. Kh\} and Pavlov, \{S. G.\} and Shastin, \{V. N.\}",

year = "1999",

month = dec,

day = "1",

doi = "10.1016/S0921-4526(99)00275-6",

language = "English",

volume = "272",

pages = "223--225",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) ; Conference date: 19-07-1999 Through 23-07-1999",

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TY - JOUR

T1 - Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW

AU - Vorobjev, L. E.

AU - Danilov, S. N.

AU - Donetsky, D. V.

AU - Firsov, D. A.

AU - Towe, E.

AU - Zhukavin, R. Kh

AU - Pavlov, S. G.

AU - Shastin, V. N.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The absorption and emission of terahertz radiation connected with intrasubband transitions of hot electrons in GaAs/AlGaAs quantum well structures are investigated experimentally and theoretically. The emission spectra in the spectral range 80-300 μm were obtained. Absorption coefficient and emission spectra were calculated taking into account acoustic and optical phonon (including nonequilibrium phonons), impurity and interface roughness scattering. The temperature of hot electrons was obtained from comparison between calculated and experimentally observed emission spectra.

AB - The absorption and emission of terahertz radiation connected with intrasubband transitions of hot electrons in GaAs/AlGaAs quantum well structures are investigated experimentally and theoretically. The emission spectra in the spectral range 80-300 μm were obtained. Absorption coefficient and emission spectra were calculated taking into account acoustic and optical phonon (including nonequilibrium phonons), impurity and interface roughness scattering. The temperature of hot electrons was obtained from comparison between calculated and experimentally observed emission spectra.

UR - https://www.scopus.com/pages/publications/0033324391

U2 - 10.1016/S0921-4526(99)00275-6

DO - 10.1016/S0921-4526(99)00275-6

M3 - Conference article

SN - 0921-4526

VL - 272

SP - 223

EP - 225

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

ER -

Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW

Abstract

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