Intrinsic tolerance to total ionizing dose radiation in gate-all-Around MOSFETs

We measured the total ionizing dose response of gate-all-around silicon nanowire n-and pMOSFETs to X-ray doses up to 2Mrad(SiO$₂). We show that they are radiation hard, with no degradation in threshold voltage, off-state current, or subthreshold slope, even at the highest dose for a wide range of bias conditions. We attribute this to the intrinsically rad-hard feature of the gate-all-around device design, where the channel is no longer in contact with any insulating layers that could form a parasitic channel.