@inproceedings{8c662293c02e4ff9942131e8656e4f54,
title = "Investigating Device Degradation and Revival in Resistive Random Access Memory",
abstract = "Understanding and correcting the degradation of Resistive Random Access Memory (ReRAM) devices is critical for hardware performance and accuracy, especially in the context of Neural Networks (NN) and hardware-based accelerator platforms. Device degradation can be mitigated by using switching conditions that prolong longevity at the expense of memory window performance, however, when devices do degrade or fail, the common approach is to bypass the affected device within the NN or memory array. This paper explores the potential for device revival, examining both short-term switching characteristics and long-term reliability.",
keywords = "Endurance, Failure Analysis, ReRAM, Reliability, Retention, Revival, Stress, Switching Variability",
author = "Maximilian Liehr and Pramod Ravindra and Karsten Beckmann and Nathaniel Cady",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 ; Conference date: 08-10-2023 Through 12-10-2023",
year = "2023",
doi = "10.1109/IIRW59383.2023.10477642",
language = "English",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Integrated Reliability Workshop, IIRW 2023",
}