@inproceedings{fe87fbb11f0746beaef4f26ba243a39d,
title = "Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms",
abstract = "4H-SiC wafers with 12 μm epilayer were implanted at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy from 13 MeV up to 66 MeV. Lattice strains introduced by the implantation process were characterized in detail by synchrotron rocking curve X-ray topography (SXRCT) and reciprocal space maps (RSMs). It is observed that the strain levels correlate with the atomic mass and energy of acceleration of the dopant atoms.",
keywords = "4H-SiC, Ion Implantation, Lattice Strain, Synchrotron X-ray Rocking Curve Topography",
author = "Zeyu Chen and Hongyu Peng and Yafei Liu and Qianyu Cheng and Shanshan Hu and Balaji Raghothamachar and Michael Dudley and Reza Ghandi and Stacey Kennerly and Peter Thieberger",
note = "Publisher Copyright: {\textcopyright} 2022 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.; 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 ; Conference date: 24-10-2021 Through 28-10-2021",
year = "2022",
doi = "10.4028/p-m7sftq",
language = "English",
isbn = "9783035727609",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "361--365",
editor = "Michaud, \{Jean Fran{\c c}ois\} and Phung, \{Luong Viet\} and Daniel Alquier and Dominique Planson",
booktitle = "Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021",
}