@inproceedings{b20751a4935d40cd8b8dee5fc55843f5,
title = "Ion species dependence of electrical characteristics in ion implanted GaAs",
abstract = "Fluorine, boron and oxygen implantation in GaAs has been investigated by electrical characterization using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Ion implantation at 100keV energy was conducted with doses of 1011 and 1012/cm2. Carrier compensation was observed in each implanted sample. The compensation effect strongly depended on ion implantation conditions and ion species. Severe surface damage was also induced which degrades electrical performance. Rapid thermal annealing (RTA) treatment showed the heavier ion implanted samples to be more thermally stable. Defect levels for each implanted species were compared and identified.",
author = "L. He and Anderson, \{W. A.\}",
year = "1993",
language = "English",
isbn = "1558991743",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "183--188",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Beam Solid Interactions: Fundamentals and Applications ; Conference date: 30-11-1992 Through 04-12-1992",
}