Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

H. H. Tseng; J. Veteran; P. J. Tobin; J. Mogab; P. G.Y. Tsui; V. Wang; M. Khare; X. W. Wang; T. P. Ma; C. Hobbs; R. Hegde; M. Hartig; G. Kenig; R. Blumenthal; R. Cotton; V. Kaushik; T. Tamagawa; B. L. Halpern; G. J. Cui; J. J. Schmitt

doi:10.1016/S1369-8001(99)00024-4

Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

H. H. Tseng
, J. Veteran
, P. J. Tobin
, J. Mogab
, P. G.Y. Tsui
, V. Wang
, M. Khare
, X. W. Wang
, T. P. Ma
, C. Hobbs
, R. Hegde
, M. Hartig
, G. Kenig
, R. Blumenthal
, R. Cotton
, V. Kaushik
, T. Tamagawa
, B. L. Halpern
, G. J. Cui
, J. J. Schmitt

NY Creates Research Foundation

NY Creates

Motorola
Yale University
Jet Process Corporation

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The increase in gate leakage current and boron penetration are major problems for scaled gate dielectrics in advanced device technology. We have demonstrated, for the first time, reduction in gate leakage current and strong resistance to boron penetration when jet vapor deposition (JVD) nitride is used as a gate dielectric in an advanced CMOS process. JVD nitride provides a robust interface in addition to well behaved bulk properties, MOSFET characteristics and ring oscillator performance. Process optimization is discussed. Manufacturing issues remain to be addressed.

Original language	English
Pages (from-to)	173-178
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	3
Issue number	3
DOIs	https://doi.org/10.1016/S1369-8001(99)00024-4
State	Published - Jun 2000

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Tseng, H. H., Veteran, J., Tobin, P. J., Mogab, J., Tsui, P. G. Y., Wang, V., Khare, M., Wang, X. W., Ma, T. P., Hobbs, C., Hegde, R., Hartig, M., Kenig, G., Blumenthal, R., Cotton, R., Kaushik, V., Tamagawa, T., Halpern, B. L., Cui, G. J., & Schmitt, J. J. (2000). Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration. Materials Science in Semiconductor Processing, 3(3), 173-178. https://doi.org/10.1016/S1369-8001(99)00024-4

@article{e9a1a5814551400bb3d713769fcabfc2,

title = "Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration",

abstract = "The increase in gate leakage current and boron penetration are major problems for scaled gate dielectrics in advanced device technology. We have demonstrated, for the first time, reduction in gate leakage current and strong resistance to boron penetration when jet vapor deposition (JVD) nitride is used as a gate dielectric in an advanced CMOS process. JVD nitride provides a robust interface in addition to well behaved bulk properties, MOSFET characteristics and ring oscillator performance. Process optimization is discussed. Manufacturing issues remain to be addressed.",

author = "Tseng, \{H. H.\} and J. Veteran and Tobin, \{P. J.\} and J. Mogab and Tsui, \{P. G.Y.\} and V. Wang and M. Khare and Wang, \{X. W.\} and Ma, \{T. P.\} and C. Hobbs and R. Hegde and M. Hartig and G. Kenig and R. Blumenthal and R. Cotton and V. Kaushik and T. Tamagawa and Halpern, \{B. L.\} and Cui, \{G. J.\} and Schmitt, \{J. J.\}",

year = "2000",

month = jun,

doi = "10.1016/S1369-8001(99)00024-4",

language = "English",

volume = "3",

pages = "173--178",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd.",

number = "3",

}

Tseng, HH, Veteran, J, Tobin, PJ, Mogab, J, Tsui, PGY, Wang, V, Khare, M, Wang, XW, Ma, TP, Hobbs, C, Hegde, R, Hartig, M, Kenig, G, Blumenthal, R, Cotton, R, Kaushik, V, Tamagawa, T, Halpern, BL, Cui, GJ & Schmitt, JJ 2000, 'Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration', Materials Science in Semiconductor Processing, vol. 3, no. 3, pp. 173-178. https://doi.org/10.1016/S1369-8001(99)00024-4

TY - JOUR

T1 - Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

AU - Tseng, H. H.

AU - Veteran, J.

AU - Tobin, P. J.

AU - Mogab, J.

AU - Tsui, P. G.Y.

AU - Wang, V.

AU - Khare, M.

AU - Wang, X. W.

AU - Ma, T. P.

AU - Hobbs, C.

AU - Hegde, R.

AU - Hartig, M.

AU - Kenig, G.

AU - Blumenthal, R.

AU - Cotton, R.

AU - Kaushik, V.

AU - Tamagawa, T.

AU - Halpern, B. L.

AU - Cui, G. J.

AU - Schmitt, J. J.

PY - 2000/6

Y1 - 2000/6

N2 - The increase in gate leakage current and boron penetration are major problems for scaled gate dielectrics in advanced device technology. We have demonstrated, for the first time, reduction in gate leakage current and strong resistance to boron penetration when jet vapor deposition (JVD) nitride is used as a gate dielectric in an advanced CMOS process. JVD nitride provides a robust interface in addition to well behaved bulk properties, MOSFET characteristics and ring oscillator performance. Process optimization is discussed. Manufacturing issues remain to be addressed.

AB - The increase in gate leakage current and boron penetration are major problems for scaled gate dielectrics in advanced device technology. We have demonstrated, for the first time, reduction in gate leakage current and strong resistance to boron penetration when jet vapor deposition (JVD) nitride is used as a gate dielectric in an advanced CMOS process. JVD nitride provides a robust interface in addition to well behaved bulk properties, MOSFET characteristics and ring oscillator performance. Process optimization is discussed. Manufacturing issues remain to be addressed.

UR - https://www.scopus.com/pages/publications/0034200039

U2 - 10.1016/S1369-8001(99)00024-4

DO - 10.1016/S1369-8001(99)00024-4

M3 - Article

SN - 1369-8001

VL - 3

SP - 173

EP - 178

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 3

ER -

Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

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