Skip to main navigation Skip to search Skip to main content

Kinetics and thermodynamics of the formation of thin film titanium disilicide

Research output: Contribution to journalConference articlepeer-review

Abstract

Multilayered diffusion couples consisting of alternating layers of titanium (Ti) and amorphous silicon (a-Si) have been fabricated using sputter deposition with a range of modulation lengths corresponding to an average composition of Ti33Si67. We have used differential scanning calorimetry to measure the enthalpy evolved during the solid state reaction a-Si + Ti → C49-TiSi2 and have characterized the phases formed using x-ray diffraction analysis. An average measured enthalpy of formation, ΔH was found to be ΔH = -58 + 9 kJ/g atom for thin film samples. Using scanning and isothermal calorimetry measurements, we have also characterized the kinetics involved during the initial intermixing stage.

Original languageEnglish
Pages (from-to)301-305
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume398
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 2 1995

Fingerprint

Dive into the research topics of 'Kinetics and thermodynamics of the formation of thin film titanium disilicide'. Together they form a unique fingerprint.

Cite this