Kinetics of thermal stress induced void growth in narrow aluminum lines

P. Børgesen; J. K. Lee; C. A. Paszkiet; C. Y. Li

doi:10.1063/1.105302

Kinetics of thermal stress induced void growth in narrow aluminum lines

P. Børgesen
, J. K. Lee
, C. A. Paszkiet
, C. Y. Li

School of Sys Sci Ind Engr

Binghamton University

Cornell University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

1-μm-wide Al lines were passivated at 300°C and annealed at 400°C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.

Original language	English
Pages (from-to)	1341-1343
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	11
DOIs	https://doi.org/10.1063/1.105302
State	Published - 1991

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@article{05f1daaec78a49578e23e9122df1af35,

title = "Kinetics of thermal stress induced void growth in narrow aluminum lines",

abstract = "1-μm-wide Al lines were passivated at 300°C and annealed at 400°C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.",

author = "P. B{\o}rgesen and Lee, \{J. K.\} and Paszkiet, \{C. A.\} and Li, \{C. Y.\}",

year = "1991",

doi = "10.1063/1.105302",

language = "English",

volume = "59",

pages = "1341--1343",

journal = "Applied Physics Letters",

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number = "11",

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T1 - Kinetics of thermal stress induced void growth in narrow aluminum lines

AU - Børgesen, P.

AU - Lee, J. K.

AU - Paszkiet, C. A.

AU - Li, C. Y.

PY - 1991

Y1 - 1991

N2 - 1-μm-wide Al lines were passivated at 300°C and annealed at 400°C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.

AB - 1-μm-wide Al lines were passivated at 300°C and annealed at 400°C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.

UR - https://www.scopus.com/pages/publications/36449006205

U2 - 10.1063/1.105302

DO - 10.1063/1.105302

M3 - Article

SN - 0003-6951

VL - 59

SP - 1341

EP - 1343

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Kinetics of thermal stress induced void growth in narrow aluminum lines

Abstract

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