LAn 11-GHz 3-V siGe voltage controlled oscillator with integrated resonator

Mehmet Soyuer; Joachim N. Burghartz; Herschel A. Ainspan; Keith A. Jenkins; Peter Xiao; Arvin R. Shahani; Margaret S. Dolan; David L. Harame

doi:10.1109/4.628762

LAn 11-GHz 3-V siGe voltage controlled oscillator with integrated resonator

Mehmet Soyuer
, Joachim N. Burghartz
, Herschel A. Ainspan
, Keith A. Jenkins
, Peter Xiao
, Arvin R. Shahani
, Margaret S. Dolan
, David L. Harame

NY Creates Research Foundation

NY Creates

IBM
NewParadigm Laboratories
Stanford University
Global Foundries, Inc.

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

A 10.5- to 11-GHz fully monolithic voltage controlled dilator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of O to 3 V. The circuit draws less than 8 niA from a 3-V supply including the reference branch bias current.

Original language	English
Pages (from-to)	1451-1454
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	32
Issue number	9
DOIs	https://doi.org/10.1109/4.628762
State	Published - Sep 1997

Keywords

Bipolar transistor oscillators
Inductors
Integrated circuits
MMIC oscillators
Microwave bipolar transistor oscillators
Microwave oscillators
Nonlinear oscillators
Resonators
Tunable oscillators
Varactors
Voltage controlled oscillators

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10.1109/4.628762

Cite this

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title = "LAn 11-GHz 3-V siGe voltage controlled oscillator with integrated resonator",

abstract = "A 10.5- to 11-GHz fully monolithic voltage controlled dilator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5\% with an on-chip varactor-tuned resonator and for a control voltage of O to 3 V. The circuit draws less than 8 niA from a 3-V supply including the reference branch bias current.",

keywords = "Bipolar transistor oscillators, Inductors, Integrated circuits, MMIC oscillators, Microwave bipolar transistor oscillators, Microwave oscillators, Nonlinear oscillators, Resonators, Tunable oscillators, Varactors, Voltage controlled oscillators",

author = "Mehmet Soyuer and Burghartz, \{Joachim N.\} and Ainspan, \{Herschel A.\} and Jenkins, \{Keith A.\} and Peter Xiao and Shahani, \{Arvin R.\} and Dolan, \{Margaret S.\} and Harame, \{David L.\}",

year = "1997",

month = sep,

doi = "10.1109/4.628762",

language = "English",

volume = "32",

pages = "1451--1454",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - LAn 11-GHz 3-V siGe voltage controlled oscillator with integrated resonator

AU - Soyuer, Mehmet

AU - Burghartz, Joachim N.

AU - Ainspan, Herschel A.

AU - Jenkins, Keith A.

AU - Xiao, Peter

AU - Shahani, Arvin R.

AU - Dolan, Margaret S.

AU - Harame, David L.

PY - 1997/9

Y1 - 1997/9

N2 - A 10.5- to 11-GHz fully monolithic voltage controlled dilator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of O to 3 V. The circuit draws less than 8 niA from a 3-V supply including the reference branch bias current.

AB - A 10.5- to 11-GHz fully monolithic voltage controlled dilator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of O to 3 V. The circuit draws less than 8 niA from a 3-V supply including the reference branch bias current.

KW - Bipolar transistor oscillators

KW - Inductors

KW - Integrated circuits

KW - MMIC oscillators

KW - Microwave bipolar transistor oscillators

KW - Microwave oscillators

KW - Nonlinear oscillators

KW - Resonators

KW - Tunable oscillators

KW - Varactors

KW - Voltage controlled oscillators

UR - https://www.scopus.com/pages/publications/0031236111

U2 - 10.1109/4.628762

DO - 10.1109/4.628762

M3 - Article

SN - 0018-9200

VL - 32

SP - 1451

EP - 1454

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 9

ER -

LAn 11-GHz 3-V siGe voltage controlled oscillator with integrated resonator

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