Laser assisted molecular beam deposition of Si, C and SiC films

R. L. DeLeon; L. Sun; E. Rexer; J. Charlebois; J. F. Garvey; E. W. Forsythe; G. S. Tompa

Laser assisted molecular beam deposition of Si, C and SiC films

R. L. DeLeon
, L. Sun
, E. Rexer
, J. Charlebois
, J. F. Garvey
, E. W. Forsythe
, G. S. Tompa

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Laser Assisted Molecular Beam Deposition (LAMBD) utilizes a train of gas pulses to precisely control the flux of species generated by laser ablation. We have used the LAMBD technique to ablate Si, C or SiC and grow films on a variety of substrates. These films were deposited as a function of a variety of source growth parameters. Source emission spectra of the Si ablation showed atomic Si and Si⁺; C ablation showed C atoms. Flux control was implemented by a variation of the laser pulse energy. Flux rates were determined by ablation target mass differences. The films have been analyzed by Raman scattering, SEM, EDX, FTIR, ESCA and surface profile measurements to determine the film structure and composition. These results demonstrate the potential of using LAMBD sources as a means of depositing a variety of high quality single and multiple component films.

Original language	English
Pages (from-to)	573-578
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	441
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

Cite this

@article{61fe9e57ec9242b2841585e55517f7da,

title = "Laser assisted molecular beam deposition of Si, C and SiC films",

abstract = "Laser Assisted Molecular Beam Deposition (LAMBD) utilizes a train of gas pulses to precisely control the flux of species generated by laser ablation. We have used the LAMBD technique to ablate Si, C or SiC and grow films on a variety of substrates. These films were deposited as a function of a variety of source growth parameters. Source emission spectra of the Si ablation showed atomic Si and Si+; C ablation showed C atoms. Flux control was implemented by a variation of the laser pulse energy. Flux rates were determined by ablation target mass differences. The films have been analyzed by Raman scattering, SEM, EDX, FTIR, ESCA and surface profile measurements to determine the film structure and composition. These results demonstrate the potential of using LAMBD sources as a means of depositing a variety of high quality single and multiple component films.",

author = "DeLeon, \{R. L.\} and L. Sun and E. Rexer and J. Charlebois and Garvey, \{J. F.\} and Forsythe, \{E. W.\} and Tompa, \{G. S.\}",

year = "1997",

language = "English",

volume = "441",

pages = "573--578",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Laser assisted molecular beam deposition of Si, C and SiC films

AU - DeLeon, R. L.

AU - Sun, L.

AU - Rexer, E.

AU - Charlebois, J.

AU - Garvey, J. F.

AU - Forsythe, E. W.

AU - Tompa, G. S.

PY - 1997

Y1 - 1997

N2 - Laser Assisted Molecular Beam Deposition (LAMBD) utilizes a train of gas pulses to precisely control the flux of species generated by laser ablation. We have used the LAMBD technique to ablate Si, C or SiC and grow films on a variety of substrates. These films were deposited as a function of a variety of source growth parameters. Source emission spectra of the Si ablation showed atomic Si and Si+; C ablation showed C atoms. Flux control was implemented by a variation of the laser pulse energy. Flux rates were determined by ablation target mass differences. The films have been analyzed by Raman scattering, SEM, EDX, FTIR, ESCA and surface profile measurements to determine the film structure and composition. These results demonstrate the potential of using LAMBD sources as a means of depositing a variety of high quality single and multiple component films.

AB - Laser Assisted Molecular Beam Deposition (LAMBD) utilizes a train of gas pulses to precisely control the flux of species generated by laser ablation. We have used the LAMBD technique to ablate Si, C or SiC and grow films on a variety of substrates. These films were deposited as a function of a variety of source growth parameters. Source emission spectra of the Si ablation showed atomic Si and Si+; C ablation showed C atoms. Flux control was implemented by a variation of the laser pulse energy. Flux rates were determined by ablation target mass differences. The films have been analyzed by Raman scattering, SEM, EDX, FTIR, ESCA and surface profile measurements to determine the film structure and composition. These results demonstrate the potential of using LAMBD sources as a means of depositing a variety of high quality single and multiple component films.

UR - https://www.scopus.com/pages/publications/0030653289

M3 - Conference article

SN - 0272-9172

VL - 441

SP - 573

EP - 578

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Laser assisted molecular beam deposition of Si, C and SiC films

Abstract

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