Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

I. R. Sellers; H. Y. Liu; T. J. Badcock; K. M. Groom; D. J. Mowbray; M. Gutiérrez; M. Hopkinson; M. S. Skolnick

doi:10.1016/j.physe.2004.08.007

Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

I. R. Sellers
, H. Y. Liu
, T. J. Badcock
, K. M. Groom
, D. J. Mowbray
, M. Gutiérrez
, M. Hopkinson
, M. S. Skolnick

Department of Electrical Engineering

University at Buffalo

University of Sheffield

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

We demonstrate that excellent 1.3 μm QD laser performance can be achieved with the use of a high-temperature step during the growth of the GaAs spacer layers. An optimised laser structure exhibits a very low room-temperature J_th and operates CW from the ground-state up to at least 105 °C. Spontaneous emission measurements indicate that the high-temperature performance is limited by non-radiative processes rather than by the thermal excitation of carriers into higher energy QD states.

Original language	English
Pages (from-to)	382-385
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	26
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physe.2004.08.007
State	Published - Feb 2005
Event	International Conference on Quantum Dots - Banff, Alberta, Canada Duration: May 10 2004 → May 13 2004

Keywords

Electroluminescence
In(Ga)As
Quantum dot laser

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10.1016/j.physe.2004.08.007

Cite this

@article{66b17f3111e146a89f2b8a6ad3249341,

title = "Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers",

abstract = "We demonstrate that excellent 1.3 μm QD laser performance can be achieved with the use of a high-temperature step during the growth of the GaAs spacer layers. An optimised laser structure exhibits a very low room-temperature Jth and operates CW from the ground-state up to at least 105 °C. Spontaneous emission measurements indicate that the high-temperature performance is limited by non-radiative processes rather than by the thermal excitation of carriers into higher energy QD states.",

keywords = "Electroluminescence, In(Ga)As, Quantum dot laser",

author = "Sellers, \{I. R.\} and Liu, \{H. Y.\} and Badcock, \{T. J.\} and Groom, \{K. M.\} and Mowbray, \{D. J.\} and M. Guti{\'e}rrez and M. Hopkinson and Skolnick, \{M. S.\}",

year = "2005",

month = feb,

doi = "10.1016/j.physe.2004.08.007",

language = "English",

volume = "26",

pages = "382--385",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

note = "International Conference on Quantum Dots ; Conference date: 10-05-2004 Through 13-05-2004",

}

TY - JOUR

T1 - Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

AU - Sellers, I. R.

AU - Liu, H. Y.

AU - Badcock, T. J.

AU - Groom, K. M.

AU - Mowbray, D. J.

AU - Gutiérrez, M.

AU - Hopkinson, M.

AU - Skolnick, M. S.

PY - 2005/2

Y1 - 2005/2

N2 - We demonstrate that excellent 1.3 μm QD laser performance can be achieved with the use of a high-temperature step during the growth of the GaAs spacer layers. An optimised laser structure exhibits a very low room-temperature Jth and operates CW from the ground-state up to at least 105 °C. Spontaneous emission measurements indicate that the high-temperature performance is limited by non-radiative processes rather than by the thermal excitation of carriers into higher energy QD states.

AB - We demonstrate that excellent 1.3 μm QD laser performance can be achieved with the use of a high-temperature step during the growth of the GaAs spacer layers. An optimised laser structure exhibits a very low room-temperature Jth and operates CW from the ground-state up to at least 105 °C. Spontaneous emission measurements indicate that the high-temperature performance is limited by non-radiative processes rather than by the thermal excitation of carriers into higher energy QD states.

KW - Electroluminescence

KW - In(Ga)As

KW - Quantum dot laser

UR - https://www.scopus.com/pages/publications/13444262185

U2 - 10.1016/j.physe.2004.08.007

DO - 10.1016/j.physe.2004.08.007

M3 - Conference article

SN - 1386-9477

VL - 26

SP - 382

EP - 385

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - International Conference on Quantum Dots

Y2 - 10 May 2004 through 13 May 2004

ER -

Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

Abstract

Keywords

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