Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

S. S. Yi; D. M. Hansen; C. K. Inoki; D. L. Harris; T. S. Kuan; T. F. Kuech

doi:10.1063/1.1306919

Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

S. S. Yi
, D. M. Hansen
, C. K. Inoki
, D. L. Harris
, T. S. Kuan
, T. F. Kuech

Physics

University at Albany

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates patterned with SiO₂ or Si₃N₄ films by metalorganic chemical vapor deposition was accomplished using trimethylgallium and trimethylantimony. Transmission electron microscopy measurements show that coalesced films grown on GaSb substrates exhibit defect-free materials, while those on GaAs substrates show regular, small-angle crystal tilting originating from large lattice mismatch.

Original language	English
Pages (from-to)	842-844
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	6
DOIs	https://doi.org/10.1063/1.1306919
State	Published - Aug 7 2000

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title = "Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition",

abstract = "Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates patterned with SiO2 or Si3N4 films by metalorganic chemical vapor deposition was accomplished using trimethylgallium and trimethylantimony. Transmission electron microscopy measurements show that coalesced films grown on GaSb substrates exhibit defect-free materials, while those on GaAs substrates show regular, small-angle crystal tilting originating from large lattice mismatch.",

author = "Yi, \{S. S.\} and Hansen, \{D. M.\} and Inoki, \{C. K.\} and Harris, \{D. L.\} and Kuan, \{T. S.\} and Kuech, \{T. F.\}",

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doi = "10.1063/1.1306919",

language = "English",

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AU - Yi, S. S.

AU - Hansen, D. M.

AU - Inoki, C. K.

AU - Harris, D. L.

AU - Kuan, T. S.

AU - Kuech, T. F.

PY - 2000/8/7

Y1 - 2000/8/7

N2 - Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates patterned with SiO2 or Si3N4 films by metalorganic chemical vapor deposition was accomplished using trimethylgallium and trimethylantimony. Transmission electron microscopy measurements show that coalesced films grown on GaSb substrates exhibit defect-free materials, while those on GaAs substrates show regular, small-angle crystal tilting originating from large lattice mismatch.

AB - Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates patterned with SiO2 or Si3N4 films by metalorganic chemical vapor deposition was accomplished using trimethylgallium and trimethylantimony. Transmission electron microscopy measurements show that coalesced films grown on GaSb substrates exhibit defect-free materials, while those on GaAs substrates show regular, small-angle crystal tilting originating from large lattice mismatch.

UR - https://www.scopus.com/pages/publications/0000374326

U2 - 10.1063/1.1306919

DO - 10.1063/1.1306919

M3 - Article

SN - 0003-6951

VL - 77

SP - 842

EP - 844

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

Abstract

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