Length-controlled and selective growth of individual indium nitride nanowires by localized laser heating

Eunpa Kim; Junsuk Rho; Sang Gil Ryu; David Hwang; Yoonkyung Lee; Kyunghoon Kim; Costas Grigoropoulos

doi:10.7567/1882-0786/ab1713

Length-controlled and selective growth of individual indium nitride nanowires by localized laser heating

Eunpa Kim
, Junsuk Rho
, Sang Gil Ryu
, David Hwang
, Yoonkyung Lee
, Kyunghoon Kim
, Costas Grigoropoulos

Mechanical Engineering

Stony Brook University

University of California at Berkeley
Pohang University of Science and Technology
Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire growth. This localization of the laser-driven growth can realize on-demand and site-selective direct synthesis of length-controlled nanowires on catalytic gold nanodots. The length of the InN nanowires is controlled by the laser irradiation time at a fixed power. Energy dispersive X-ray, Raman and photoluminescence spectroscopic analyzes respectively characterize the elemental composition, crystallinity, and emission properties of as-grown InN nanowires.

Original language	English
Article number	056501
Journal	Applied Physics Express
Volume	12
Issue number	5
DOIs	https://doi.org/10.7567/1882-0786/ab1713
State	Published - May 1 2019

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title = "Length-controlled and selective growth of individual indium nitride nanowires by localized laser heating",

abstract = "Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire growth. This localization of the laser-driven growth can realize on-demand and site-selective direct synthesis of length-controlled nanowires on catalytic gold nanodots. The length of the InN nanowires is controlled by the laser irradiation time at a fixed power. Energy dispersive X-ray, Raman and photoluminescence spectroscopic analyzes respectively characterize the elemental composition, crystallinity, and emission properties of as-grown InN nanowires.",

author = "Eunpa Kim and Junsuk Rho and Ryu, \{Sang Gil\} and David Hwang and Yoonkyung Lee and Kyunghoon Kim and Costas Grigoropoulos",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

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doi = "10.7567/1882-0786/ab1713",

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T1 - Length-controlled and selective growth of individual indium nitride nanowires by localized laser heating

AU - Kim, Eunpa

AU - Rho, Junsuk

AU - Ryu, Sang Gil

AU - Hwang, David

AU - Lee, Yoonkyung

AU - Kim, Kyunghoon

AU - Grigoropoulos, Costas

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire growth. This localization of the laser-driven growth can realize on-demand and site-selective direct synthesis of length-controlled nanowires on catalytic gold nanodots. The length of the InN nanowires is controlled by the laser irradiation time at a fixed power. Energy dispersive X-ray, Raman and photoluminescence spectroscopic analyzes respectively characterize the elemental composition, crystallinity, and emission properties of as-grown InN nanowires.

AB - Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire growth. This localization of the laser-driven growth can realize on-demand and site-selective direct synthesis of length-controlled nanowires on catalytic gold nanodots. The length of the InN nanowires is controlled by the laser irradiation time at a fixed power. Energy dispersive X-ray, Raman and photoluminescence spectroscopic analyzes respectively characterize the elemental composition, crystallinity, and emission properties of as-grown InN nanowires.

UR - https://www.scopus.com/pages/publications/85065653339

U2 - 10.7567/1882-0786/ab1713

DO - 10.7567/1882-0786/ab1713

M3 - Article

SN - 1882-0778

VL - 12

JO - Applied Physics Express

JF - Applied Physics Express

IS - 5

M1 - 056501

ER -

Length-controlled and selective growth of individual indium nitride nanowires by localized laser heating

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