Long-range order in AlxGa1-xAs

T. S. Kuan; T. F. Kuech; W. I. Wang; E. L. Wilkie

doi:10.1103/PhysRevLett.54.201

Long-range order in AlxGa1-xAs

T. S. Kuan
, T. F. Kuech
, W. I. Wang
, E. L. Wilkie

Physics

University at Albany

IBM

Research output: Contribution to journal › Article › peer-review

370 Scopus citations

Abstract

We report the first observation of long-range order in a semiconductor III-V ternary alloy. AlxGa1-xAs thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying the 0,0,0 and 0 sites and Al atoms the ,0, and 0 sites in each unit cell. Our results indicate that this ordered structure is the equilibrium state of AlxGa1-xAs.

Original language	English
Pages (from-to)	201-204
Number of pages	4
Journal	Physical Review Letters
Volume	54
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevLett.54.201
State	Published - 1985

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@article{fb1b281efb1b4b92a899aa9c4cae99e5,

title = "Long-range order in AlxGa1-xAs",

abstract = "We report the first observation of long-range order in a semiconductor III-V ternary alloy. AlxGa1-xAs thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying the 0,0,0 and 0 sites and Al atoms the ,0, and 0 sites in each unit cell. Our results indicate that this ordered structure is the equilibrium state of AlxGa1-xAs.",

author = "Kuan, \{T. S.\} and Kuech, \{T. F.\} and Wang, \{W. I.\} and Wilkie, \{E. L.\}",

year = "1985",

doi = "10.1103/PhysRevLett.54.201",

language = "English",

volume = "54",

pages = "201--204",

journal = "Physical Review Letters",

issn = "0031-9007",

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T1 - Long-range order in AlxGa1-xAs

AU - Kuan, T. S.

AU - Kuech, T. F.

AU - Wang, W. I.

AU - Wilkie, E. L.

PY - 1985

Y1 - 1985

N2 - We report the first observation of long-range order in a semiconductor III-V ternary alloy. AlxGa1-xAs thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying the 0,0,0 and 0 sites and Al atoms the ,0, and 0 sites in each unit cell. Our results indicate that this ordered structure is the equilibrium state of AlxGa1-xAs.

AB - We report the first observation of long-range order in a semiconductor III-V ternary alloy. AlxGa1-xAs thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying the 0,0,0 and 0 sites and Al atoms the ,0, and 0 sites in each unit cell. Our results indicate that this ordered structure is the equilibrium state of AlxGa1-xAs.

UR - https://www.scopus.com/pages/publications/0001257561

U2 - 10.1103/PhysRevLett.54.201

DO - 10.1103/PhysRevLett.54.201

M3 - Article

SN - 0031-9007

VL - 54

SP - 201

EP - 204

JO - Physical Review Letters

JF - Physical Review Letters

IS - 3

ER -

Long-range order in AlxGa1-xAs

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