Low frequency noise and interface density of traps in InGaAs MOSFETs with GdScO3 high-K dielectric

S. Rumyantsev; W. Stillman; M. Shur; T. Heeg; D. G. Schlom; S. Koveshnikov; R. Kambhampati; V. Tokranov; S. Oktyabrsky

doi:10.1142/S0129156411006441

Low frequency noise and interface density of traps in InGaAs MOSFETs with GdScO₃ high-K dielectric

S. Rumyantsev
, W. Stillman
, M. Shur
, T. Heeg
, D. G. Schlom
, S. Koveshnikov
, R. Kambhampati
, V. Tokranov
, S. Oktyabrsky

University at Albany

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO₃ high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

Original language	English
Pages (from-to)	105-113
Number of pages	9
Journal	International Journal of High Speed Electronics and Systems
Volume	20
Issue number	1
DOIs	https://doi.org/10.1142/S0129156411006441
State	Published - Mar 2011

Keywords

AB
InGaAs
MOSFET
high-k
noise
trap density

Access to Document

10.1142/S0129156411006441

Cite this

@article{b193aefa761b4d8d8e52ad6bed0ee2ea,

title = "Low frequency noise and interface density of traps in InGaAs MOSFETs with GdScO3 high-K dielectric",

abstract = "Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.",

keywords = "AB, InGaAs, MOSFET, high-k, noise, trap density",

author = "S. Rumyantsev and W. Stillman and M. Shur and T. Heeg and Schlom, \{D. G.\} and S. Koveshnikov and R. Kambhampati and V. Tokranov and S. Oktyabrsky",

year = "2011",

month = mar,

doi = "10.1142/S0129156411006441",

language = "English",

volume = "20",

pages = "105--113",

journal = "International Journal of High Speed Electronics and Systems",

issn = "0129-1564",

publisher = "World Scientific",

number = "1",

}

TY - JOUR

T1 - Low frequency noise and interface density of traps in InGaAs MOSFETs with GdScO3 high-K dielectric

AU - Rumyantsev, S.

AU - Stillman, W.

AU - Shur, M.

AU - Heeg, T.

AU - Schlom, D. G.

AU - Koveshnikov, S.

AU - Kambhampati, R.

AU - Tokranov, V.

AU - Oktyabrsky, S.

PY - 2011/3

Y1 - 2011/3

N2 - Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

AB - Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

KW - AB

KW - InGaAs

KW - MOSFET

KW - high-k

KW - noise

KW - trap density

UR - https://www.scopus.com/pages/publications/79955404777

U2 - 10.1142/S0129156411006441

DO - 10.1142/S0129156411006441

M3 - Article

SN - 0129-1564

VL - 20

SP - 105

EP - 113

JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

IS - 1

ER -

Low frequency noise and interface density of traps in InGaAs MOSFETs with GdScO₃ high-K dielectric

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this