Low-frequency noise figures-of-merit in RF SiGe HBT technology

Jin Tang; Guofu Niu; Zhenrong Jin; John D. Cressler; Shiming Zhang; Alvin J. Joseph; David L. Harame

Low-frequency noise figures-of-merit in RF SiGe HBT technology

Jin Tang
, Guofu Niu
, Zhenrong Jin
, John D. Cressler
, Shiming Zhang
, Alvin J. Joseph
, David L. Harame

NY Creates Research Foundation

NY Creates

Auburn University

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We present the first systematic experimental and modeling results of corner frequency (f_C) and the corner frequency to cutoff frequency ratio (f_C/f_T) for SiGe HBTs in a commercial SiGe RF technology. The f_C/f_T ratio is examined as a function of biasing current for SiGe HBTs featuring multiple collector doping profiles (breakdown voltages) and multiple SiGe profiles.

Original language	English
Pages (from-to)	179-182
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
State	Published - 2002
Event	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States Duration: Jun 2 2002 → Jun 7 2002

Cite this

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title = "Low-frequency noise figures-of-merit in RF SiGe HBT technology",

abstract = "We present the first systematic experimental and modeling results of corner frequency (fC) and the corner frequency to cutoff frequency ratio (fC/fT) for SiGe HBTs in a commercial SiGe RF technology. The fC/fT ratio is examined as a function of biasing current for SiGe HBTs featuring multiple collector doping profiles (breakdown voltages) and multiple SiGe profiles.",

author = "Jin Tang and Guofu Niu and Zhenrong Jin and Cressler, \{John D.\} and Shiming Zhang and Joseph, \{Alvin J.\} and Harame, \{David L.\}",

year = "2002",

language = "English",

volume = "1",

pages = "179--182",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 02-06-2002 Through 07-06-2002",

}

TY - JOUR

T1 - Low-frequency noise figures-of-merit in RF SiGe HBT technology

AU - Tang, Jin

AU - Niu, Guofu

AU - Jin, Zhenrong

AU - Cressler, John D.

AU - Zhang, Shiming

AU - Joseph, Alvin J.

AU - Harame, David L.

PY - 2002

Y1 - 2002

N2 - We present the first systematic experimental and modeling results of corner frequency (fC) and the corner frequency to cutoff frequency ratio (fC/fT) for SiGe HBTs in a commercial SiGe RF technology. The fC/fT ratio is examined as a function of biasing current for SiGe HBTs featuring multiple collector doping profiles (breakdown voltages) and multiple SiGe profiles.

AB - We present the first systematic experimental and modeling results of corner frequency (fC) and the corner frequency to cutoff frequency ratio (fC/fT) for SiGe HBTs in a commercial SiGe RF technology. The fC/fT ratio is examined as a function of biasing current for SiGe HBTs featuring multiple collector doping profiles (breakdown voltages) and multiple SiGe profiles.

UR - https://www.scopus.com/pages/publications/0036070459

M3 - Conference article

SN - 0149-645X

VL - 1

SP - 179

EP - 182

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2002 IEEE MTT-S International Microwave Symposium Digest

Y2 - 2 June 2002 through 7 June 2002

ER -

Low-frequency noise figures-of-merit in RF SiGe HBT technology

Abstract

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