Low-frequency oscillations in semi-insulating InP

C. Backhouse; V. A. Samuilov; L. Young

doi:10.1063/1.106815

Low-frequency oscillations in semi-insulating InP

C. Backhouse
, V. A. Samuilov
, L. Young

Materials Science and Engineering

Stony Brook University

University of British Columbia

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Goronkin and Maracas (IEDM Conf. Proc., Dec. 1984, p. 182) reported a method of obtaining information on deep levels in GaAs by analyzing the temperature dependence of low-frequency current oscillations observed in semi-insulating material. In the present work, a modified version of their method was applied to Fe compensated InP. Power density spectra showed one main peak and several less well defined. An Arrhenius plot of log(T²/2f) versus 1/T gave an activation energy of 0.47 eV for the main peak, close to the value found by optical transient current spectroscopy (OTCS). The method is complementary to OTCS in that the same equipment is used and information is obtained more easily on levels which exhibit field-enhanced trapping.

Original language	English
Pages (from-to)	2906-2907
Number of pages	2
Journal	Applied Physics Letters
Volume	60
Issue number	23
DOIs	https://doi.org/10.1063/1.106815
State	Published - 1992

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title = "Low-frequency oscillations in semi-insulating InP",

abstract = "Goronkin and Maracas (IEDM Conf. Proc., Dec. 1984, p. 182) reported a method of obtaining information on deep levels in GaAs by analyzing the temperature dependence of low-frequency current oscillations observed in semi-insulating material. In the present work, a modified version of their method was applied to Fe compensated InP. Power density spectra showed one main peak and several less well defined. An Arrhenius plot of log(T2/2f) versus 1/T gave an activation energy of 0.47 eV for the main peak, close to the value found by optical transient current spectroscopy (OTCS). The method is complementary to OTCS in that the same equipment is used and information is obtained more easily on levels which exhibit field-enhanced trapping.",

author = "C. Backhouse and Samuilov, \{V. A.\} and L. Young",

year = "1992",

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T1 - Low-frequency oscillations in semi-insulating InP

AU - Backhouse, C.

AU - Samuilov, V. A.

AU - Young, L.

PY - 1992

Y1 - 1992

N2 - Goronkin and Maracas (IEDM Conf. Proc., Dec. 1984, p. 182) reported a method of obtaining information on deep levels in GaAs by analyzing the temperature dependence of low-frequency current oscillations observed in semi-insulating material. In the present work, a modified version of their method was applied to Fe compensated InP. Power density spectra showed one main peak and several less well defined. An Arrhenius plot of log(T2/2f) versus 1/T gave an activation energy of 0.47 eV for the main peak, close to the value found by optical transient current spectroscopy (OTCS). The method is complementary to OTCS in that the same equipment is used and information is obtained more easily on levels which exhibit field-enhanced trapping.

AB - Goronkin and Maracas (IEDM Conf. Proc., Dec. 1984, p. 182) reported a method of obtaining information on deep levels in GaAs by analyzing the temperature dependence of low-frequency current oscillations observed in semi-insulating material. In the present work, a modified version of their method was applied to Fe compensated InP. Power density spectra showed one main peak and several less well defined. An Arrhenius plot of log(T2/2f) versus 1/T gave an activation energy of 0.47 eV for the main peak, close to the value found by optical transient current spectroscopy (OTCS). The method is complementary to OTCS in that the same equipment is used and information is obtained more easily on levels which exhibit field-enhanced trapping.

UR - https://www.scopus.com/pages/publications/33846876409

U2 - 10.1063/1.106815

DO - 10.1063/1.106815

M3 - Article

SN - 0003-6951

VL - 60

SP - 2906

EP - 2907

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Low-frequency oscillations in semi-insulating InP

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