Abstract
We have studied tunneling transport through a high-mobility two-dimensional electron gas in a GaSb/AlSb/ InAs/AlSb/GaSb heterostructure. In high perpendicular magnetic fields and at temperatures below 1 K the tunneling conductance shows deviations from regular Shubnikov-de Haas oscillations. An overall decrease in conductance with decreasing temperature is attributed to the formation of a Coulomb gap in the tunneling density of states. Reproducible conductance fluctuations are due to resonant tunneling possibly through interface-related states.
| Original language | English |
|---|---|
| Pages (from-to) | 516-519 |
| Number of pages | 4 |
| Journal | Surface Science |
| Volume | 305 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Mar 20 1994 |
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