Abstract
We report measurements of the magneto and Hall resistance in GaSb-InAs-GaSb heterostructures at magnetic fields up to 28T and temperatures as low as 0. 005K. In addition to the quantized Hall effect, extraordinary structures are observed, which cannot be accounted for in the framework of fractional Hall quantization present in one-carrier systems. These new features are attributed to the uniqueness of the InAs-GaSb system, where two-dimensional electrons and holes coexist.
| Original language | English |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Publisher | Springer Verlag |
| Pages | 397-400 |
| Number of pages | 4 |
| ISBN (Print) | 0387961089, 9780387961088 |
| DOIs | |
| State | Published - 1985 |
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