Low-temperature PECVD SiO2 on Si and SiC

L. Teng; W. A. Anderson

doi:10.1557/proc-483-147

Low-temperature PECVD SiO₂ on Si and SiC

L. Teng
, W. A. Anderson

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

The deposition of SiO₂ films by plasma-enhanced-chemical-vapor-deposition (PECVD) using tetraethylorthosilicate (TEOS) was studied. MOS capacitors were fabricated on both Si and SiC for this study. Several different sets of experiments were conducted for PECVD deposition according to different growth parameters and the results compared. For Si samples with SiO₂ deposited at a substrate temperature 300 °C, the C-V curve gave a flat-band voltage of 1V and a transition slope of 112 pF/V. The dielectric constant of the deposited SiO₂ film was 4.2 and the Si/SiO₂ interface trap density was calculated to be 1.8×10¹⁰ cm^-2. The I-V curve showed a leakage current density of 1.2×10^-9 A/cm² and dielectric breakdown field strength of 9.2 MV/cm. For SiC samples, the PECVD deposition gave a uniform SiO₂ film with a controllable deposition rate of 0.3 nm/sec. The refractive index and dielectric constant of the as-deposited SiO₂ film were 1.46 and 3.84 respectively. The I-V curve showed a leakage current density of 2×10^-9 A/cm² and a breakdown field of 4.7 MV/cm.

Original language	English
Pages (from-to)	147-153
Number of pages	7
Journal	Materials Research Society Symposium - Proceedings
Volume	483
DOIs	https://doi.org/10.1557/proc-483-147
State	Published - 1997
Event	Proceedings of the 1997 Fall MRS Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

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@article{f76d2302becc444eac73a0dbff15aa1c,

title = "Low-temperature PECVD SiO2 on Si and SiC",

abstract = "The deposition of SiO2 films by plasma-enhanced-chemical-vapor-deposition (PECVD) using tetraethylorthosilicate (TEOS) was studied. MOS capacitors were fabricated on both Si and SiC for this study. Several different sets of experiments were conducted for PECVD deposition according to different growth parameters and the results compared. For Si samples with SiO2 deposited at a substrate temperature 300 °C, the C-V curve gave a flat-band voltage of 1V and a transition slope of 112 pF/V. The dielectric constant of the deposited SiO2 film was 4.2 and the Si/SiO2 interface trap density was calculated to be 1.8×1010 cm-2. The I-V curve showed a leakage current density of 1.2×10-9 A/cm2 and dielectric breakdown field strength of 9.2 MV/cm. For SiC samples, the PECVD deposition gave a uniform SiO2 film with a controllable deposition rate of 0.3 nm/sec. The refractive index and dielectric constant of the as-deposited SiO2 film were 1.46 and 3.84 respectively. The I-V curve showed a leakage current density of 2×10-9 A/cm2 and a breakdown field of 4.7 MV/cm.",

author = "L. Teng and Anderson, \{W. A.\}",

year = "1997",

doi = "10.1557/proc-483-147",

language = "English",

volume = "483",

pages = "147--153",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 Fall MRS Symposium ; Conference date: 01-12-1997 Through 04-12-1997",

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TY - JOUR

T1 - Low-temperature PECVD SiO2 on Si and SiC

AU - Teng, L.

AU - Anderson, W. A.

PY - 1997

Y1 - 1997

N2 - The deposition of SiO2 films by plasma-enhanced-chemical-vapor-deposition (PECVD) using tetraethylorthosilicate (TEOS) was studied. MOS capacitors were fabricated on both Si and SiC for this study. Several different sets of experiments were conducted for PECVD deposition according to different growth parameters and the results compared. For Si samples with SiO2 deposited at a substrate temperature 300 °C, the C-V curve gave a flat-band voltage of 1V and a transition slope of 112 pF/V. The dielectric constant of the deposited SiO2 film was 4.2 and the Si/SiO2 interface trap density was calculated to be 1.8×1010 cm-2. The I-V curve showed a leakage current density of 1.2×10-9 A/cm2 and dielectric breakdown field strength of 9.2 MV/cm. For SiC samples, the PECVD deposition gave a uniform SiO2 film with a controllable deposition rate of 0.3 nm/sec. The refractive index and dielectric constant of the as-deposited SiO2 film were 1.46 and 3.84 respectively. The I-V curve showed a leakage current density of 2×10-9 A/cm2 and a breakdown field of 4.7 MV/cm.

AB - The deposition of SiO2 films by plasma-enhanced-chemical-vapor-deposition (PECVD) using tetraethylorthosilicate (TEOS) was studied. MOS capacitors were fabricated on both Si and SiC for this study. Several different sets of experiments were conducted for PECVD deposition according to different growth parameters and the results compared. For Si samples with SiO2 deposited at a substrate temperature 300 °C, the C-V curve gave a flat-band voltage of 1V and a transition slope of 112 pF/V. The dielectric constant of the deposited SiO2 film was 4.2 and the Si/SiO2 interface trap density was calculated to be 1.8×1010 cm-2. The I-V curve showed a leakage current density of 1.2×10-9 A/cm2 and dielectric breakdown field strength of 9.2 MV/cm. For SiC samples, the PECVD deposition gave a uniform SiO2 film with a controllable deposition rate of 0.3 nm/sec. The refractive index and dielectric constant of the as-deposited SiO2 film were 1.46 and 3.84 respectively. The I-V curve showed a leakage current density of 2×10-9 A/cm2 and a breakdown field of 4.7 MV/cm.

UR - https://www.scopus.com/pages/publications/0031388360

U2 - 10.1557/proc-483-147

DO - 10.1557/proc-483-147

M3 - Conference article

SN - 0272-9172

VL - 483

SP - 147

EP - 153

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 Fall MRS Symposium

Y2 - 1 December 1997 through 4 December 1997

ER -

Low-temperature PECVD SiO₂ on Si and SiC

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