Magnetic bipolar transistor

Jaroslav Fabian; Igor Žutić; S. Das Sarma

doi:10.1063/1.1637954

Magnetic bipolar transistor

Jaroslav Fabian
, Igor Žutić
, S. Das Sarma

Physics

University at Buffalo

Research output: Contribution to journal › Article › peer-review

131 Scopus citations

Abstract

A magnetic bipolar transistor (MBT) with a magnetic base and an externally injected source spin in the emitter was analyzed. The electrons flowed easily from the emitter to the base and were spin polarized. The current amplification of the MBT was tuned by the spin. The results show that the electrical spin injection through the transistor was executed in the forward active regime.

Original language	English
Pages (from-to)	85-87
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	1
DOIs	https://doi.org/10.1063/1.1637954
State	Published - Jan 5 2004

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10.1063/1.1637954

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title = "Magnetic bipolar transistor",

abstract = "A magnetic bipolar transistor (MBT) with a magnetic base and an externally injected source spin in the emitter was analyzed. The electrons flowed easily from the emitter to the base and were spin polarized. The current amplification of the MBT was tuned by the spin. The results show that the electrical spin injection through the transistor was executed in the forward active regime.",

author = "Jaroslav Fabian and Igor {\v Z}uti{\'c} and \{Das Sarma\}, S.",

year = "2004",

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doi = "10.1063/1.1637954",

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AU - Fabian, Jaroslav

AU - Žutić, Igor

AU - Das Sarma, S.

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N2 - A magnetic bipolar transistor (MBT) with a magnetic base and an externally injected source spin in the emitter was analyzed. The electrons flowed easily from the emitter to the base and were spin polarized. The current amplification of the MBT was tuned by the spin. The results show that the electrical spin injection through the transistor was executed in the forward active regime.

AB - A magnetic bipolar transistor (MBT) with a magnetic base and an externally injected source spin in the emitter was analyzed. The electrons flowed easily from the emitter to the base and were spin polarized. The current amplification of the MBT was tuned by the spin. The results show that the electrical spin injection through the transistor was executed in the forward active regime.

UR - https://www.scopus.com/pages/publications/0942278273

U2 - 10.1063/1.1637954

DO - 10.1063/1.1637954

M3 - Article

SN - 0003-6951

VL - 84

SP - 85

EP - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Magnetic bipolar transistor

Abstract

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