Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

D. C. Ahlgren; M. Gilbert; D. Greenberg; S. J. Jeng; J. Malinowski; D. Nguyen-Ngoc; K. Schonenberg; K. Stein; R. Groves; K. Walter; G. Hueckel; D. Colavito; G. Freeman; D. Sunderland; D. L. Harame; B. Meyersori

doi:10.1109/IEDM.1996.554115

Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

D. C. Ahlgren
, M. Gilbert
, D. Greenberg
, S. J. Jeng
, J. Malinowski
, D. Nguyen-Ngoc
, K. Schonenberg
, K. Stein
, R. Groves
, K. Walter
, G. Hueckel
, D. Colavito
, G. Freeman
, D. Sunderland
, D. L. Harame
, B. Meyersori

NY Creates Research Foundation

NY Creates

Global Foundries, Inc.
IBM

Research output: Contribution to journal › Conference article › peer-review

84 Scopus citations

Abstract

Early production results are reviewed for IBMs integrated SiGe HBT Technology. With a sample size of over 200 wafers, statistical contol of key HBT parameters (FT,F-, Rbb, h i,p) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirements for the high performance wireless communicationsmarketplace.

Original language	English
Pages (from-to)	859-862
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1996.554115
State	Published - 1996
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 8 1996 → Dec 11 1996

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10.1109/IEDM.1996.554115

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Ahlgren, D. C., Gilbert, M., Greenberg, D., Jeng, S. J., Malinowski, J., Nguyen-Ngoc, D., Schonenberg, K., Stein, K., Groves, R., Walter, K., Hueckel, G., Colavito, D., Freeman, G., Sunderland, D., Harame, D. L., & Meyersori, B. (1996). Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace. Technical Digest - International Electron Devices Meeting, 859-862. https://doi.org/10.1109/IEDM.1996.554115

@article{3a45bec3c9774c61a6b7ba5566091984,

title = "Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace",

abstract = "Early production results are reviewed for IBMs integrated SiGe HBT Technology. With a sample size of over 200 wafers, statistical contol of key HBT parameters (FT,F-, Rbb, h i,p) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirements for the high performance wireless communicationsmarketplace.",

author = "Ahlgren, \{D. C.\} and M. Gilbert and D. Greenberg and Jeng, \{S. J.\} and J. Malinowski and D. Nguyen-Ngoc and K. Schonenberg and K. Stein and R. Groves and K. Walter and G. Hueckel and D. Colavito and G. Freeman and D. Sunderland and Harame, \{D. L.\} and B. Meyersori",

note = "Publisher Copyright: {\textcopyright} 1996 IEEE; Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

year = "1996",

doi = "10.1109/IEDM.1996.554115",

language = "English",

pages = "859--862",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Ahlgren, DC, Gilbert, M, Greenberg, D, Jeng, SJ, Malinowski, J, Nguyen-Ngoc, D, Schonenberg, K, Stein, K, Groves, R, Walter, K, Hueckel, G, Colavito, D, Freeman, G, Sunderland, D, Harame, DL & Meyersori, B 1996, 'Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace', Technical Digest - International Electron Devices Meeting, pp. 859-862. https://doi.org/10.1109/IEDM.1996.554115

TY - JOUR

T1 - Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

AU - Ahlgren, D. C.

AU - Gilbert, M.

AU - Greenberg, D.

AU - Jeng, S. J.

AU - Malinowski, J.

AU - Nguyen-Ngoc, D.

AU - Schonenberg, K.

AU - Stein, K.

AU - Groves, R.

AU - Walter, K.

AU - Hueckel, G.

AU - Colavito, D.

AU - Freeman, G.

AU - Sunderland, D.

AU - Harame, D. L.

AU - Meyersori, B.

PY - 1996

Y1 - 1996

N2 - Early production results are reviewed for IBMs integrated SiGe HBT Technology. With a sample size of over 200 wafers, statistical contol of key HBT parameters (FT,F-, Rbb, h i,p) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirements for the high performance wireless communicationsmarketplace.

AB - Early production results are reviewed for IBMs integrated SiGe HBT Technology. With a sample size of over 200 wafers, statistical contol of key HBT parameters (FT,F-, Rbb, h i,p) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirements for the high performance wireless communicationsmarketplace.

UR - https://www.scopus.com/pages/publications/0030412794

U2 - 10.1109/IEDM.1996.554115

DO - 10.1109/IEDM.1996.554115

M3 - Conference article

SN - 0163-1918

SP - 859

EP - 862

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

Abstract

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