@inproceedings{0c4cddfade8c4916a154c35b1f7ff1b5,
title = "Mapping of threading screw dislocations in 4H n-type SiC wafers",
abstract = "X-ray topography shows that selective KOH etching after CVD growth of n-type epilayers on highly N doped 4H SiC substrates can be used to reliably map pure and mixed Threading Screw Dislocations (TSD). The influence of the mapping grid density and the wafer position in the crystal on the average TSD density are investigated. A reliable mapping of TSD contributed to the development of 100mm SiC wafers with average TSD density down to 200 cm-2.",
keywords = "Dislocation density, KOH, Threading screw dislocation, X-ray topography",
author = "Alexandre Ellison and Erik S{\"o}rman and Bj{\"o}rn Sundqvist and Bj{\"o}rn Magnusson and Yu Yang and Jianqiu Guo and Ouloide Goue and Blaji Raghothamachar and Michael Dudley",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.376",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "376--379",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and \{La Via\}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}