Abstract
Measuring mechanical implications of high current densities in microelectronic packaging interconnects has always been a challenging goal. Due to small interconnect size this task has typically been accomplished by measuring the change in electrical resistance of the joint. This measurement parameter is global and does not give local mechanical state information. Also, understanding strain evolution in the solder over time is an important step toward developing a damage mechanics model. The real-time, full-field, strain displacement in a eutectic Sn/Pb solder joint during electrical current stressing was measured with Moiré interferometry (Post et al., High sensitivity Moire, Springer, New York, 1994) under in situ conditions. A finite element model simulation for thermal stressing was performed and compared with measured strain. The initial results show that the measured strain was largely due to thermal stressing versus the current density of 1.8 × 10 2 A/cm2. A second Moiré interferometry experiment with thermal control distinguishes deformation of solder joint due to pure current stressing above 5000 A/cm2.
| Original language | English |
|---|---|
| Pages (from-to) | 2021-2029 |
| Number of pages | 9 |
| Journal | Microelectronics Reliability |
| Volume | 43 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2003 |
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