Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy

V. P. Labella; Y. Shusterman; L. J. Schowalter; C. A. Ventrice

doi:10.1116/1.581286

Measurements of epitaxially grown Pt/CaF₂/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy

V. P. Labella
, Y. Shusterman
, L. J. Schowalter
, C. A. Ventrice

Nanoscale Science and Engineering

University at Albany

Rensselaer Polytechnic Institute

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The hot electron transport properties and growth morphology of ultrathin Pt/CaF₂/Si(111) metal-insulator-semiconductor structures have been characterized in situ by ballistic electron emission microscopy (BEEM) and scanning tunneling microscopy (STM). Platinum thicknesses from submonolayer to 50 ̊ and CaF₂ thicknesses from 2 to 10 ML have been characterized. The STM images of the Pt/CaF₂/Si(111) structures show the atomic steps of the underlying CaF₂ morphology, as well as the formation of Pt nodules, which nucleate at step edges and defect sites. Some BEEM spectra show an anomalous peak near 2 eV, which has not been observed in previous studies of other metal/CaF₂/Si(111) structures. The localized nature of this peak indicates that it results from an interaction between the ballistic electrons and fluorine vacancies at the Pt-CaF₂ interface.

Original language	English
Pages (from-to)	1692-1696
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	16
Issue number	3
DOIs	https://doi.org/10.1116/1.581286
State	Published - 1998

Access to Document

10.1116/1.581286

Cite this

@article{ec73023391c64633b19b66810ce946d6,

title = "Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy",

abstract = "The hot electron transport properties and growth morphology of ultrathin Pt/CaF2/Si(111) metal-insulator-semiconductor structures have been characterized in situ by ballistic electron emission microscopy (BEEM) and scanning tunneling microscopy (STM). Platinum thicknesses from submonolayer to 50 ̊ and CaF2 thicknesses from 2 to 10 ML have been characterized. The STM images of the Pt/CaF2/Si(111) structures show the atomic steps of the underlying CaF2 morphology, as well as the formation of Pt nodules, which nucleate at step edges and defect sites. Some BEEM spectra show an anomalous peak near 2 eV, which has not been observed in previous studies of other metal/CaF2/Si(111) structures. The localized nature of this peak indicates that it results from an interaction between the ballistic electrons and fluorine vacancies at the Pt-CaF2 interface.",

author = "Labella, \{V. P.\} and Y. Shusterman and Schowalter, \{L. J.\} and Ventrice, \{C. A.\}",

year = "1998",

doi = "10.1116/1.581286",

language = "English",

volume = "16",

pages = "1692--1696",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

Measurements of epitaxially grown Pt/CaF₂/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy. / Labella, V. P.; Shusterman, Y.; Schowalter, L. J. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 16, No. 3, 1998, p. 1692-1696.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy

AU - Labella, V. P.

AU - Shusterman, Y.

AU - Schowalter, L. J.

AU - Ventrice, C. A.

PY - 1998

Y1 - 1998

N2 - The hot electron transport properties and growth morphology of ultrathin Pt/CaF2/Si(111) metal-insulator-semiconductor structures have been characterized in situ by ballistic electron emission microscopy (BEEM) and scanning tunneling microscopy (STM). Platinum thicknesses from submonolayer to 50 ̊ and CaF2 thicknesses from 2 to 10 ML have been characterized. The STM images of the Pt/CaF2/Si(111) structures show the atomic steps of the underlying CaF2 morphology, as well as the formation of Pt nodules, which nucleate at step edges and defect sites. Some BEEM spectra show an anomalous peak near 2 eV, which has not been observed in previous studies of other metal/CaF2/Si(111) structures. The localized nature of this peak indicates that it results from an interaction between the ballistic electrons and fluorine vacancies at the Pt-CaF2 interface.

AB - The hot electron transport properties and growth morphology of ultrathin Pt/CaF2/Si(111) metal-insulator-semiconductor structures have been characterized in situ by ballistic electron emission microscopy (BEEM) and scanning tunneling microscopy (STM). Platinum thicknesses from submonolayer to 50 ̊ and CaF2 thicknesses from 2 to 10 ML have been characterized. The STM images of the Pt/CaF2/Si(111) structures show the atomic steps of the underlying CaF2 morphology, as well as the formation of Pt nodules, which nucleate at step edges and defect sites. Some BEEM spectra show an anomalous peak near 2 eV, which has not been observed in previous studies of other metal/CaF2/Si(111) structures. The localized nature of this peak indicates that it results from an interaction between the ballistic electrons and fluorine vacancies at the Pt-CaF2 interface.

UR - https://www.scopus.com/pages/publications/0007194074

U2 - 10.1116/1.581286

DO - 10.1116/1.581286

M3 - Article

SN - 0734-2101

VL - 16

SP - 1692

EP - 1696

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Measurements of epitaxially grown Pt/CaF₂/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this