Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots

A. M. Mintairov; P. A. Blagnov; O. V. Kovalenkov; C. Li; J. L. Merz; S. Oktyabrsky; V. Tokranov; A. S. Vlasov; D. A. Vinokurov

Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots

A. M. Mintairov
, P. A. Blagnov
, O. V. Kovalenkov
, C. Li
, J. L. Merz
, S. Oktyabrsky
, V. Tokranov
, A. S. Vlasov
, D. A. Vinokurov

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have studied high-energy shifts of single quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip. "Pressure" coefficients of 0.65-3 meV/nm have been measured for self-organized InAs/GaAs, InAs/AlAs and InP/GalnP QDs in agreement with numerical calculations of the local strain field. We found an increase of the tip-induced pressure with increasing aperture diameter from 50-300 nm. A correlation between the shift rate and QD stiffness was obtained. We also observed an increase (x 10) of QD emission intensity with increased pressure.

Original language	English
Pages (from-to)	137-140
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	174
State	Published - 2003
Event	Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland Duration: Oct 7 2002 → Oct 10 2002

Cite this

@article{a8b543a6110e45fdac7fa6d6215030bc,

title = "Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots",

abstract = "We have studied high-energy shifts of single quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip. {"}Pressure{"} coefficients of 0.65-3 meV/nm have been measured for self-organized InAs/GaAs, InAs/AlAs and InP/GalnP QDs in agreement with numerical calculations of the local strain field. We found an increase of the tip-induced pressure with increasing aperture diameter from 50-300 nm. A correlation between the shift rate and QD stiffness was obtained. We also observed an increase (x 10) of QD emission intensity with increased pressure.",

author = "Mintairov, \{A. M.\} and Blagnov, \{P. A.\} and Kovalenkov, \{O. V.\} and C. Li and Merz, \{J. L.\} and S. Oktyabrsky and V. Tokranov and Vlasov, \{A. S.\} and Vinokurov, \{D. A.\}",

year = "2003",

language = "English",

volume = "174",

pages = "137--140",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd",

note = "Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors ; Conference date: 07-10-2002 Through 10-10-2002",

}

TY - JOUR

T1 - Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots

AU - Mintairov, A. M.

AU - Blagnov, P. A.

AU - Kovalenkov, O. V.

AU - Li, C.

AU - Merz, J. L.

AU - Oktyabrsky, S.

AU - Tokranov, V.

AU - Vlasov, A. S.

AU - Vinokurov, D. A.

PY - 2003

Y1 - 2003

N2 - We have studied high-energy shifts of single quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip. "Pressure" coefficients of 0.65-3 meV/nm have been measured for self-organized InAs/GaAs, InAs/AlAs and InP/GalnP QDs in agreement with numerical calculations of the local strain field. We found an increase of the tip-induced pressure with increasing aperture diameter from 50-300 nm. A correlation between the shift rate and QD stiffness was obtained. We also observed an increase (x 10) of QD emission intensity with increased pressure.

AB - We have studied high-energy shifts of single quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip. "Pressure" coefficients of 0.65-3 meV/nm have been measured for self-organized InAs/GaAs, InAs/AlAs and InP/GalnP QDs in agreement with numerical calculations of the local strain field. We found an increase of the tip-induced pressure with increasing aperture diameter from 50-300 nm. A correlation between the shift rate and QD stiffness was obtained. We also observed an increase (x 10) of QD emission intensity with increased pressure.

UR - https://www.scopus.com/pages/publications/10444281646

M3 - Conference article

SN - 0951-3248

VL - 174

SP - 137

EP - 140

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors

Y2 - 7 October 2002 through 10 October 2002

ER -

Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots

Abstract

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