Abstract
We have studied high-energy shifts of single quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip. "Pressure" coefficients of 0.65-3 meV/nm have been measured for self-organized InAs/GaAs, InAs/AlAs and InP/GaInP QDs in agreement with numerical calculations of the local strain field. We found an increase of the tip-induced pressure with increasing aperture diameter from 50-300 nm. A correlation between the shift rate and QD stiffness was obtained. We also observed an order of magnitude increase of single QD emission intensity with increased pressure.
| Original language | English |
|---|---|
| Pages (from-to) | 319-324 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 722 |
| DOIs | |
| State | Published - 2002 |
| Event | Materials and Devices for Optoelectronics and Microphotonics - San Francisco, CA, United States Duration: Apr 1 2002 → Apr 5 2002 |
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