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Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots

  • A. M. Mintairov
  • , P. A. Blagnov
  • , O. V. Kovalenkov
  • , C. Li
  • , J. L. Merz
  • , S. Oktyabrsky
  • , V. Tokranov
  • , A. S. Vlasov
  • , D. A. Vinokurov

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We have studied high-energy shifts of single quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip. "Pressure" coefficients of 0.65-3 meV/nm have been measured for self-organized InAs/GaAs, InAs/AlAs and InP/GaInP QDs in agreement with numerical calculations of the local strain field. We found an increase of the tip-induced pressure with increasing aperture diameter from 50-300 nm. A correlation between the shift rate and QD stiffness was obtained. We also observed an order of magnitude increase of single QD emission intensity with increased pressure.

Original languageEnglish
Pages (from-to)319-324
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume722
DOIs
StatePublished - 2002
EventMaterials and Devices for Optoelectronics and Microphotonics - San Francisco, CA, United States
Duration: Apr 1 2002Apr 5 2002

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