@inproceedings{f91dc1ab8e744419912410214d297f29,
title = "Memory circuits using NanoFerroic devices",
abstract = "A variety of magneto-electric and ferroelectric (Nanoferroic) logic devices are being investigated as possible technologies options for the beyond CMOS era. The technologies being developed have been studied previously for their logic capabilities. One benefit of most NanoFerroic devices is that they have an intrinsic non-volatile memory capability, making them especially interesting for standalone memory applications.",
keywords = "DRAM, FRAM, NanoFerroic, area integrated circuits, array, beyond-CMOS, electronics, memory, non-volatile",
author = "Andrew Marshall and Nishtha Sharma and Jonathan Bird",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 12th IEEE Dallas Circuits and Systems Conference, DCAS 2016 ; Conference date: 10-10-2016",
year = "2016",
month = dec,
day = "19",
doi = "10.1109/DCAS.2016.7791124",
language = "English",
series = "2016 IEEE Dallas Circuits and Systems Conference, DCAS 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE Dallas Circuits and Systems Conference, DCAS 2016",
address = "United States",
}