Memory effects in orthorhombic TaS3

G. Mihály; L. Mihály

doi:10.1016/0038-1098(83)90851-7

Memory effects in orthorhombic TaS₃

G. Mihály
, L. Mihály

Physics and Astronomy

Stony Brook University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The pulse sign memory (SM) and its relation to the metastable low field conductivity (conductivity memory, CM) was investigated in orthorombic TaS₃ in the temperature range of 90-160K. The response to the pulses of alternating sign shows a well characterized charging process if the electric field in the sample exceeds a critical value E′_MS. For short samples, the SM and nonlinear conductivity separate quite well, E′_MS is smaller than the E_T threshold field of the nonlinear conductivity and it is equal to the critical field of the metastable ohmic conductivity change. Moreover, the SM and the CM show similar temperature dependence indicating that the underlying mechanism is common to the two phenomena.

Original language	English
Pages (from-to)	449-452
Number of pages	4
Journal	Solid State Communications
Volume	48
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(83)90851-7
State	Published - Nov 1983

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title = "Memory effects in orthorhombic TaS3",

abstract = "The pulse sign memory (SM) and its relation to the metastable low field conductivity (conductivity memory, CM) was investigated in orthorombic TaS3 in the temperature range of 90-160K. The response to the pulses of alternating sign shows a well characterized charging process if the electric field in the sample exceeds a critical value E′MS. For short samples, the SM and nonlinear conductivity separate quite well, E′MS is smaller than the ET threshold field of the nonlinear conductivity and it is equal to the critical field of the metastable ohmic conductivity change. Moreover, the SM and the CM show similar temperature dependence indicating that the underlying mechanism is common to the two phenomena.",

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AU - Mihály, L.

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N2 - The pulse sign memory (SM) and its relation to the metastable low field conductivity (conductivity memory, CM) was investigated in orthorombic TaS3 in the temperature range of 90-160K. The response to the pulses of alternating sign shows a well characterized charging process if the electric field in the sample exceeds a critical value E′MS. For short samples, the SM and nonlinear conductivity separate quite well, E′MS is smaller than the ET threshold field of the nonlinear conductivity and it is equal to the critical field of the metastable ohmic conductivity change. Moreover, the SM and the CM show similar temperature dependence indicating that the underlying mechanism is common to the two phenomena.

AB - The pulse sign memory (SM) and its relation to the metastable low field conductivity (conductivity memory, CM) was investigated in orthorombic TaS3 in the temperature range of 90-160K. The response to the pulses of alternating sign shows a well characterized charging process if the electric field in the sample exceeds a critical value E′MS. For short samples, the SM and nonlinear conductivity separate quite well, E′MS is smaller than the ET threshold field of the nonlinear conductivity and it is equal to the critical field of the metastable ohmic conductivity change. Moreover, the SM and the CM show similar temperature dependence indicating that the underlying mechanism is common to the two phenomena.

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DO - 10.1016/0038-1098(83)90851-7

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JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Memory effects in orthorhombic TaS₃

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