Metal-induced grown Si nanostructures for large-area-device applications

Chunhai Ji; Wayne A. Anderson

doi:10.1109/TED.2003.815861

Metal-induced grown Si nanostructures for large-area-device applications

Chunhai Ji
, Wayne A. Anderson

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) films were formed by using a metal (Ni and Co) induced growth (MIG) method, in which nc-Si films epitaxially grow via the formation of a metal disilicide due to an extremely small lattice mismatch. This method avoids high-temperature processing and can be scaled up for large areas. We report on the present state of the fabrication and properties of MIG nc-Si. The effects of processing parameters and different metal prelayers on the Si nanostructures and electrical properties are discussed. The current-voltage-temperature measurement for an Al Schottky diode on MIG nc-Si reveals thermionic field emission to be the dominant carrier transport mechanism in the high-voltage forward current-voltage (I-V) region. The potential applications of these films include large-area solar cells or flat panel displays.

Original language	English
Pages (from-to)	1885-1889
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	9
DOIs	https://doi.org/10.1109/TED.2003.815861
State	Published - Sep 2003

Keywords

Hydrogenated nanocrystalline silicon (nc-Si:H)
Metal-induced growth

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10.1109/TED.2003.815861

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@article{8dffa5f531c346d3acf2e7a0664eac86,

title = "Metal-induced grown Si nanostructures for large-area-device applications",

abstract = "Hydrogenated nanocrystalline silicon (nc-Si:H) films were formed by using a metal (Ni and Co) induced growth (MIG) method, in which nc-Si films epitaxially grow via the formation of a metal disilicide due to an extremely small lattice mismatch. This method avoids high-temperature processing and can be scaled up for large areas. We report on the present state of the fabrication and properties of MIG nc-Si. The effects of processing parameters and different metal prelayers on the Si nanostructures and electrical properties are discussed. The current-voltage-temperature measurement for an Al Schottky diode on MIG nc-Si reveals thermionic field emission to be the dominant carrier transport mechanism in the high-voltage forward current-voltage (I-V) region. The potential applications of these films include large-area solar cells or flat panel displays.",

keywords = "Hydrogenated nanocrystalline silicon (nc-Si:H), Metal-induced growth",

author = "Chunhai Ji and Anderson, \{Wayne A.\}",

year = "2003",

month = sep,

doi = "10.1109/TED.2003.815861",

language = "English",

volume = "50",

pages = "1885--1889",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Metal-induced grown Si nanostructures for large-area-device applications

AU - Ji, Chunhai

AU - Anderson, Wayne A.

PY - 2003/9

Y1 - 2003/9

N2 - Hydrogenated nanocrystalline silicon (nc-Si:H) films were formed by using a metal (Ni and Co) induced growth (MIG) method, in which nc-Si films epitaxially grow via the formation of a metal disilicide due to an extremely small lattice mismatch. This method avoids high-temperature processing and can be scaled up for large areas. We report on the present state of the fabrication and properties of MIG nc-Si. The effects of processing parameters and different metal prelayers on the Si nanostructures and electrical properties are discussed. The current-voltage-temperature measurement for an Al Schottky diode on MIG nc-Si reveals thermionic field emission to be the dominant carrier transport mechanism in the high-voltage forward current-voltage (I-V) region. The potential applications of these films include large-area solar cells or flat panel displays.

AB - Hydrogenated nanocrystalline silicon (nc-Si:H) films were formed by using a metal (Ni and Co) induced growth (MIG) method, in which nc-Si films epitaxially grow via the formation of a metal disilicide due to an extremely small lattice mismatch. This method avoids high-temperature processing and can be scaled up for large areas. We report on the present state of the fabrication and properties of MIG nc-Si. The effects of processing parameters and different metal prelayers on the Si nanostructures and electrical properties are discussed. The current-voltage-temperature measurement for an Al Schottky diode on MIG nc-Si reveals thermionic field emission to be the dominant carrier transport mechanism in the high-voltage forward current-voltage (I-V) region. The potential applications of these films include large-area solar cells or flat panel displays.

KW - Hydrogenated nanocrystalline silicon (nc-Si:H)

KW - Metal-induced growth

UR - https://www.scopus.com/pages/publications/0043285971

U2 - 10.1109/TED.2003.815861

DO - 10.1109/TED.2003.815861

M3 - Article

SN - 0018-9383

VL - 50

SP - 1885

EP - 1889

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Metal-induced grown Si nanostructures for large-area-device applications

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