@inproceedings{c11df80966aa473eb23d87408dd2382a,
title = "Metal-induced growth of poly-Si on foreign substrates for solar cell applications",
abstract = "A new technological method of producing 0.5-6μm thick device-quality poly-Si films at temperatures below 600°C has been developed. The technique relies on the epitaxial columnar growth of the Si crystals on the lattice-matching NiSi2 formed as a result of the Si deposition on a Ni prelayer, whose thickness is shown to influence the Si structure. The Si was sputtered onto the heated substrate which was previously coated with 25nm of Ni. Such metal-induced growth (MIG) of polysilicon is proven to be applicable to a variety of inexpensive, lightweight foreign substrates, with Ni disilicide providing a good back ohmic contact to the Si film. The MIG-diode performance is promising for solar cell applications.",
author = "Guliants, \{Elena A.\} and Anderson, \{Wayne A.\}",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",
year = "2000",
doi = "10.1109/PVSC.2000.915777",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "154--157",
booktitle = "Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000",
address = "United States",
}