Metal silicide-mediated microcrystalline silicon thin-film growth for photovoltaics

Joondong Kim; Wayne A. Anderson

doi:10.1016/j.solmat.2006.11.009

Metal silicide-mediated microcrystalline silicon thin-film growth for photovoltaics

Joondong Kim
, Wayne A. Anderson

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo
Korea Institute of Machinery and Materials

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Microcrystalline thin Si films were grown by the metal-induced growth method. The metal catalyst (Co, Ni, or Co-coated Ni) first reacted to sputtered Si forming a silicide layer. Then a Si film was epitaxially grown above the silicide seed template. The crystallinity of Si films was investigated by X-ray diffraction (XRD) confirming Si film growth with CoSi₂ or NiSi₂ as an intermediate step. The grown Si films were fabricated into Schottky photodiodes. The Co-coated Ni modulated the silicide formation and gave a short-circuit current density (J_sc) of 10.6 mA/cm², which is one order higher than that for the single Co catalyst case.

Original language	English
Pages (from-to)	534-538
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	91
Issue number	6
DOIs	https://doi.org/10.1016/j.solmat.2006.11.009
State	Published - Mar 23 2007

Keywords

Epitaxial crystalline
Metal silicide
Photovoltaics
Si film

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10.1016/j.solmat.2006.11.009

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title = "Metal silicide-mediated microcrystalline silicon thin-film growth for photovoltaics",

abstract = "Microcrystalline thin Si films were grown by the metal-induced growth method. The metal catalyst (Co, Ni, or Co-coated Ni) first reacted to sputtered Si forming a silicide layer. Then a Si film was epitaxially grown above the silicide seed template. The crystallinity of Si films was investigated by X-ray diffraction (XRD) confirming Si film growth with CoSi2 or NiSi2 as an intermediate step. The grown Si films were fabricated into Schottky photodiodes. The Co-coated Ni modulated the silicide formation and gave a short-circuit current density (Jsc) of 10.6 mA/cm2, which is one order higher than that for the single Co catalyst case.",

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year = "2007",

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T1 - Metal silicide-mediated microcrystalline silicon thin-film growth for photovoltaics

AU - Kim, Joondong

AU - Anderson, Wayne A.

PY - 2007/3/23

Y1 - 2007/3/23

N2 - Microcrystalline thin Si films were grown by the metal-induced growth method. The metal catalyst (Co, Ni, or Co-coated Ni) first reacted to sputtered Si forming a silicide layer. Then a Si film was epitaxially grown above the silicide seed template. The crystallinity of Si films was investigated by X-ray diffraction (XRD) confirming Si film growth with CoSi2 or NiSi2 as an intermediate step. The grown Si films were fabricated into Schottky photodiodes. The Co-coated Ni modulated the silicide formation and gave a short-circuit current density (Jsc) of 10.6 mA/cm2, which is one order higher than that for the single Co catalyst case.

AB - Microcrystalline thin Si films were grown by the metal-induced growth method. The metal catalyst (Co, Ni, or Co-coated Ni) first reacted to sputtered Si forming a silicide layer. Then a Si film was epitaxially grown above the silicide seed template. The crystallinity of Si films was investigated by X-ray diffraction (XRD) confirming Si film growth with CoSi2 or NiSi2 as an intermediate step. The grown Si films were fabricated into Schottky photodiodes. The Co-coated Ni modulated the silicide formation and gave a short-circuit current density (Jsc) of 10.6 mA/cm2, which is one order higher than that for the single Co catalyst case.

KW - Epitaxial crystalline

KW - Metal silicide

KW - Photovoltaics

KW - Si film

UR - https://www.scopus.com/pages/publications/33847272220

U2 - 10.1016/j.solmat.2006.11.009

DO - 10.1016/j.solmat.2006.11.009

M3 - Article

SN - 0927-0248

VL - 91

SP - 534

EP - 538

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 6

ER -

Metal silicide-mediated microcrystalline silicon thin-film growth for photovoltaics

Abstract

Keywords

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