Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region

Ding Wang; Dmitry Donetsky; Gela Kipshidze; Youxi Lin; Leon Shterengas; Gregory Belenky; Wendy Sarney; Stefan Svensson

doi:10.1063/1.4817823

Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region

Ding Wang
, Dmitry Donetsky
, Gela Kipshidze
, Youxi Lin
, Leon Shterengas
, Gregory Belenky
, Wendy Sarney
, Stefan Svensson

Electrical Engineering

Stony Brook University

Stony Brook University
U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

InAs_0.6Sb_0.4/Al_0.75In_0.25Sb- based barrier photodetectors were grown metamorphically on compositionally graded Ga_1-xIn_xSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 μm and T = 150 K, devices with 1-μm thick absorbers demonstrated an external quantum efficiency of 18% under a bias voltage of 0.45 V.

Original language	English
Article number	051120
Journal	Applied Physics Letters
Volume	103
Issue number	5
DOIs	https://doi.org/10.1063/1.4817823
State	Published - Jul 29 2013

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10.1063/1.4817823

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title = "Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region",

abstract = "InAs0.6Sb0.4/Al0.75In0.25Sb- based barrier photodetectors were grown metamorphically on compositionally graded Ga1-xInxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 μm and T = 150 K, devices with 1-μm thick absorbers demonstrated an external quantum efficiency of 18\% under a bias voltage of 0.45 V.",

author = "Ding Wang and Dmitry Donetsky and Gela Kipshidze and Youxi Lin and Leon Shterengas and Gregory Belenky and Wendy Sarney and Stefan Svensson",

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AU - Wang, Ding

AU - Donetsky, Dmitry

AU - Kipshidze, Gela

AU - Lin, Youxi

AU - Shterengas, Leon

AU - Belenky, Gregory

AU - Sarney, Wendy

AU - Svensson, Stefan

PY - 2013/7/29

Y1 - 2013/7/29

N2 - InAs0.6Sb0.4/Al0.75In0.25Sb- based barrier photodetectors were grown metamorphically on compositionally graded Ga1-xInxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 μm and T = 150 K, devices with 1-μm thick absorbers demonstrated an external quantum efficiency of 18% under a bias voltage of 0.45 V.

AB - InAs0.6Sb0.4/Al0.75In0.25Sb- based barrier photodetectors were grown metamorphically on compositionally graded Ga1-xInxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 μm and T = 150 K, devices with 1-μm thick absorbers demonstrated an external quantum efficiency of 18% under a bias voltage of 0.45 V.

UR - https://www.scopus.com/pages/publications/84882354820

U2 - 10.1063/1.4817823

DO - 10.1063/1.4817823

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051120

ER -

Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region

Abstract

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