Abstract
We investigate the dramatic switch of resistance in ordered correlated insulators when they are driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main experimental features of resistive switching (RS), such as the hysteretic I-V curves and the formation of hot conductive filaments. The energy-resolved electron distribution at the RS reveals the underlying nonequilibrium electronic mechanism, namely Landau-Zener tunneling, and also justifies a thermal description in which the hot-electron temperature, estimated from the first moment of the distribution, matches the equilibrium-phase transition temperature. We discuss the tangled relationship between filament growth and negative differential resistance and the influence of crystallographic structure and disorder in the RS.
| Original language | English |
|---|---|
| Pages (from-to) | 2994-2998 |
| Number of pages | 5 |
| Journal | Nano Letters |
| Volume | 17 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 10 2017 |
Keywords
- Joule heating
- Landau−Zener tunneling
- Resistive switching
- nonequilibrium Green's function method
- nonequilibrium-phase transition
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